公开(公告)号：US20160001405A1

公开(公告)日：2016-01-07

申请号：US14770208

申请日：2013-02-28

申请人： Tao FENG ,  LINDE AKTIENGESELLSCHAFT

发明人： Tao Feng

IPC分类号： B23P11/02

CPC分类号： B23P11/025 ,  B23P2700/02 ,  F16B4/006

摘要： The invention provides an anti-frozen processing apparatus and method used in a shrink fitting process of an inter component and outer component, which can reduce and eliminate the icy layer on the surface of low temperature inner component, and also can increase the productivity, improve the fitting quality and reduce the nitrogen consumption.

摘要翻译： 本发明提供了一种防冻处理装置和方法，用于在部件和外部部件的收缩装配过程中，可以减少和消除低温内部部件表面的冰层，并且还可以提高生产率，提高 适合品质，降低氮耗。

公开(公告)号：US20130274270A1

公开(公告)日：2013-10-17

申请号：US13995389

申请日：2011-12-21

申请人： Monika Brink ,  Hans-Peter Niedermann ,  Marcus Knell ,  Tao Feng ,  Scott T. Trzaska ,  Arthur J. Cooper ,  Shaileshkumar Ramanial Desai ,  Vinayak Keshav Gore

发明人： Monika Brink ,  Hans-Peter Niedermann ,  Marcus Knell ,  Tao Feng ,  Scott T. Trzaska ,  Arthur J. Cooper ,  Shaileshkumar Ramanial Desai ,  Vinayak Keshav Gore

IPC分类号： C07D295/155 ,  A61K45/06 ,  A61K31/495

CPC分类号： C07D295/155 ,  A61K31/495 ,  A61K45/06 ,  C07C253/30 ,  C07C255/58 ,  C07C303/28 ,  C07C309/66 ,  C07D241/04 ,  C07D309/12

摘要： Polymorphs of 3-chloro-4[(2R)-2-(4-chlorophenyl)-4-[(1R)-1-(4-cyanophenyl)ethyl]-1-piperazinyl]-benzonitrile are disclosed, as well as pharmaceutical compositions comprising said polymorphs, methods of using the polymorphs, and a process for preparing them.

摘要翻译： 公开了3-氯-4 [（2R）-2-（4-氯苯基）-4 - [（1R）-1-（4-氰基苯基）乙基] -1-哌嗪基] - 苄腈的多晶型物，以及药物 包含所述多晶型物的组合物，使用多晶型物的方法及其制备方法。

公开(公告)号：US20120283284A1

公开(公告)日：2012-11-08

申请号：US13508277

申请日：2010-11-04

申请人： Xiaodong Luo ,  Tao Feng ,  Yan Li ,  Yuanyuan Wang ,  Xianghai Cai ,  Yaping Liu

发明人： Xiaodong Luo ,  Tao Feng ,  Yan Li ,  Yuanyuan Wang ,  Xianghai Cai ,  Yaping Liu

IPC分类号： C07D519/00 ,  A61P35/00 ,  A61P35/02 ,  A61K31/4375

CPC分类号： C07D519/04 ,  A61K31/4375 ,  A61K31/475 ,  A61K36/24 ,  C07D519/00

摘要： The present invention relates to pharmaceutical technical field, to melonine bisindole compounds, pharmaceutical compositions thereof, and preparation methods thereof. Specifically, the present invention relates to melonine bisindole compounds of Formula I, pharmaceutically acceptable salts thereof, pharmaceutical compositions comprising the compounds or pharmaceutically acceptable salts thereof. The present invention further relates to method for preparing the melonine bisindole compounds of Formula I or pharmaceutically acceptable salts thereof, and the use of the melonine bisindole compounds of Formula I or pharmaceutically acceptable salts thereof in the manufacture of a medicament for the treatment or prophylaxis of cancers.

摘要翻译： 本发明涉及药用技术领域，甜瓜双吲哚化合物及其药物组合物及其制备方法。 具体地，本发明涉及式I的甜瓜双吲哚化合物，其药学上可接受的盐，包含该化合物或其药学上可接受的盐的药物组合物。 本发明还涉及制备式I的甜菜双吲哚化合物或其药学上可接受的盐的方法，以及式I的甜瓜双吲哚化合物或其药学上可接受的盐在制备用于治疗或预防 癌症

公开(公告)号：US08242013B2

公开(公告)日：2012-08-14

申请号：US12749696

申请日：2010-03-30

申请人： Tao Feng ,  Yueh-Se Ho

发明人： Tao Feng ,  Yueh-Se Ho

IPC分类号： H01L21/4763

CPC分类号： H01L21/561 ,  H01L23/142 ,  H01L23/3114 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/92 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/8385 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/00

摘要： A virtually substrate-less composite power semiconductor device (VSLCPSD) and method are disclosed. The VSLCPSD has a power semiconductor device (PSD), a front-face device carrier (FDC) made out of a carrier material and an intervening bonding layer (IBL). Both carrier and IBL material can be conductive or non-conductive. The PSD has back substrate portion, front semiconductor device portion with patterned front-face device metallization pads and a virtually diminishing thickness TPSD. The FDC has patterned back-face carrier metallizations contacting the front-face device metallization pads, patterned front-face carrier metallization pads and numerous parallelly connected through-carrier conductive vias respectively connecting the back-face carrier metallizations to the front-face carrier metallization pads. The FDC thickness TFDC is large enough to provide structural rigidity to the VSLCPSD. The diminishing thickness TPSD effects a low back substrate resistance and the through-carrier conductive vias effect a low front-face contact resistance to the front-face device metallization pads.

摘要翻译： 公开了一种实际上无衬底的复合功率半导体器件（VSLCPSD）和方法。 VSLCPSD具有功率半导体器件（PSD），由载体材料制成的正面器件载体（FDC）和中间键合层（IBL）。 载体和IBL材料都可以是导电的或不导电的。 PSD具有后衬底部分，具有图案化前面装置金属化焊盘的前半导体器件部分和实际上减小的厚度TPSD。 FDC具有接触前表面器件金属化焊盘，图案化前面载体金属化焊盘和多个并联连接的贯穿载体导电通孔的图案化背面载体金属化，其分别将背面载体金属化物连接到前面载体金属化焊盘 。 FDC厚度TFDC足够大以向VSLCPSD提供结构刚度。 厚度减小的TPSD会影响背面的底层电阻，并且贯穿载体的导电通孔会对前面装置的金属化焊盘产生低的前端接触电阻。

公开(公告)号：US20120202320A1

公开(公告)日：2012-08-09

申请号：US13452750

申请日：2012-04-20

申请人： Tao Feng ,  Ming Sun

发明人： Tao Feng ,  Ming Sun

IPC分类号： H01L21/78

CPC分类号： H01L24/11 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/013

摘要： Wafer-level chip scale packaging of metal-oxide-semiconductor-field-effect-transistors (MOSFET's) provides protection and good solder-ability to a die backside by fabricating a plurality of power MOSFET devices with die contacts on a wafer that can later be cut into individual die. A plurality of contact pads is included on the wafer to provide connectivity to the die contacts. A layer which includes aluminum (Al) or zinc (Zn) is electrolessly plated on a backside of the wafer to form a metalized backside. The plating tank used in this step is not contaminated. The contact pads and metalized backside are plated with a layer of electroless nickel (Ni) followed by a layer of gold (Au). Solder balls are formed on each of the contact pads after their plating with nickel (Ni) and gold (Au). The wafer is diced to yield MOSFET wafer level chip-scale packages which provide protection and good solder-ability to the die backside.

摘要翻译： 金属氧化物半导体场效应晶体管（MOSFET）的晶片级芯片尺寸封装通过在晶片上制造具有芯片触点的多个功率MOSFET器件来提供对模具背面的保护和良好的焊接能力，其可以稍后 切成个人死亡 多个接触焊盘包括在晶片上以提供与管芯触点的连接。 将包含铝（Al）或锌（Zn）的层无电镀在晶片的背面以形成金属化的背面。 本步骤中使用的镀槽不会受到污染。 接触垫和金属化背面镀有一层无电镀镍（Ni），然后镀一层金（Au）。 在镀镍（Ni）和金（Au）之后，在每个接触焊盘上形成焊球。 切割晶圆以产生MOSFET晶片级芯片级封装，为模具背面提供保护和良好的焊接能力。

公开(公告)号：US08222078B2

公开(公告)日：2012-07-17

申请号：US12507778

申请日：2009-07-22

申请人： Tao Feng

发明人： Tao Feng

IPC分类号： H01L21/00

CPC分类号： H01L29/0657 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/29 ,  H01L24/32 ,  H01L24/94 ,  H01L2224/02371 ,  H01L2224/03011 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0362 ,  H01L2224/05548 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06182 ,  H01L2224/08225 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48666 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48766 ,  H01L2224/83805 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/157 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01079 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01013 ,  H01L2924/01047 ,  H01L2224/03 ,  H01L2224/83 ,  H01L2224/48 ,  H01L2224/05552

摘要： A semiconductor device package die and method of manufacture are disclosed. The device package die may comprise a device substrate having one or more front electrodes located on a front surface of the device substrate and electrically connected to one or more corresponding device regions formed within the device substrate proximate the front surface. A back conductive layer is formed on a back surface of the device substrate. The back conductive layer is electrically connected to a device region formed within the device substrate proximate a back surface of the device substrate. One or more conductive extensions are formed on one or more corresponding sidewalls of the device substrate in electrical contact with the back conductive layer, and extend to a portion of the front surface of the device substrate. A support substrate is bonded to the back surface of the device substrate.

摘要翻译： 公开了一种半导体器件封装管芯及其制造方法。 器件封装裸片可以包括具有一个或多个前电极的器件衬底，位于器件衬底的前表面上，并且电连接到靠近前表面形成在器件衬底内的一个或多个相应器件区域。 背面导电层形成在器件衬底的背面上。 背面导电层电连接到在器件衬底附近形成的器件区域，靠近器件衬底的后表面。 一个或多个导电延伸部形成在与背导电层电接触的器件衬底的一个或多个相应的侧壁上，并且延伸到器件衬底的前表面的一部分。 支撑基板结合到装置基板的背面。

公开(公告)号：US20120104580A1

公开(公告)日：2012-05-03

申请号：US12916086

申请日：2010-10-29

申请人： Tao Feng ,  Zhiqiang Niu ,  Yuping Gong ,  Ruisheng Wu ,  Ping Huang ,  Lei Shi ,  Yueh-Se Ho

发明人： Tao Feng ,  Zhiqiang Niu ,  Yuping Gong ,  Ruisheng Wu ,  Ping Huang ,  Lei Shi ,  Yueh-Se Ho

IPC分类号： H01L23/495 ,  H01L23/498

CPC分类号： H01L21/6836 ,  H01L21/56 ,  H01L21/561 ,  H01L21/563 ,  H01L21/565 ,  H01L21/6835 ,  H01L21/76897 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/495 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/36 ,  H01L24/40 ,  H01L24/73 ,  H01L24/94 ,  H01L25/50 ,  H01L27/088 ,  H01L29/0657 ,  H01L29/7827 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/05009 ,  H01L2224/05025 ,  H01L2224/051 ,  H01L2224/05139 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05571 ,  H01L2224/0603 ,  H01L2224/0616 ,  H01L2224/06181 ,  H01L2224/1184 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/73253 ,  H01L2224/73255 ,  H01L2224/73263 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10155 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/2064 ,  H01L2924/3511 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A substrate-less composite power semiconductor device may include a thin substrate and a top metal layer located on a top surface of the substrate. A total thickness of the substrate and the epitaxial layer may be less than 25 microns. Solder bumps are formed on top of the top metal layer and molding compound surrounds the solder bumps and leaves the solder bumps at least partly exposed.

摘要翻译： 无基底复合功率半导体器件可以包括薄衬底和位于衬底顶表面上的顶金属层。 衬底和外延层的总厚度可以小于25微米。 焊料凸块形成在顶部金属层的顶部，并且模塑料围绕焊料凸起并且使焊料凸块至少部分暴露。

公开(公告)号：US08058961B2

公开(公告)日：2011-11-15

申请号：US13021347

申请日：2011-02-04

申请人： François Hébert ,  Tao Feng ,  Xiaotian Zhang ,  Jun Lu

发明人： François Hébert ,  Tao Feng ,  Xiaotian Zhang ,  Jun Lu

IPC分类号： H01F5/00

CPC分类号： H01F17/062

摘要： A lead frame-based discrete power inductor is disclosed. The power inductor includes top and bottom lead frames, the leads of which form a coil around a single closed-loop magnetic core. The coil includes interconnections between inner and outer contact sections of the top and bottom lead frames, the magnetic core being sandwiched between the top and bottom lead frames. Ones of the leads of the top and bottom lead frames have a generally non-linear, stepped configuration such that the leads of the top lead frame couple adjacent leads of the bottom lead frame about the magnetic core to form the coil.

摘要翻译： 公开了一种基于引线框架的分立功率电感器。 功率电感器包括顶部和底部引线框架，其引线围绕单个闭环磁芯形成线圈。 线圈包括顶部和底部引线框架的内部和外部接触部分之间的互连，磁芯夹在顶部和底部引线框架之间。 顶部引线框架和底部引线框架的引线的一部分具有大致非线性的阶梯状构造，使得顶部引线框架的引线将底部引线框架的相邻引线围绕磁芯耦合以形成线圈。

公开(公告)号：US08048775B2

公开(公告)日：2011-11-01

申请号：US11880455

申请日：2007-07-20

申请人： Tao Feng ,  Sung-Shan Tai

发明人： Tao Feng ,  Sung-Shan Tai

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/02035 ,  H01L21/02013 ,  H01L21/3043 ,  H01L2924/0002 ,  Y10S438/977 ,  H01L2924/00

摘要： A process of forming ultra thin wafers having an edge support ring is disclosed. The process provides an edge support ring having an angled inner wall compatible with spin etch processes.

公开(公告)号：US20110223742A1

公开(公告)日：2011-09-15

申请号：US13115097

申请日：2011-05-24

申请人： Tao Feng ,  Sung-Shan Tai

发明人： Tao Feng ,  Sung-Shan Tai

IPC分类号： H01L21/304

CPC分类号： H01L21/02035 ,  H01L21/02013 ,  H01L21/3043 ,  H01L2924/0002 ,  Y10S438/977 ,  H01L2924/00

摘要： A process of forming ultra thin wafers having an edge support ring is disclosed. The process provides an edge support ring having an angled inner wall compatible with spin etch processes.

摘要翻译： 公开了一种形成具有边缘支撑环的超薄晶片的工艺。 该工艺提供了具有与旋转蚀刻工艺兼容的成角度的内壁的边缘支撑环。