发明授权
- 专利标题： Method for removing halogen-containing residues from substrate
- 专利标题（中）： 从底物中除去含卤素残留物的方法
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申请号： US13408703申请日： 2012-02-29
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公开(公告)号： US08992689B2公开(公告)日： 2015-03-31
- 发明人: Adauto Diaz , Andrew Nguyen , Benjamin Schwarz , Eu Jin Lim , Jared Ahmad Lee , James P. Cruse , Li Zhang , Scott M. Williams , Xiaoliang Zhuang , Zhuang Li
- 申请人： Adauto Diaz , Andrew Nguyen , Benjamin Schwarz , Eu Jin Lim , Jared Ahmad Lee , James P. Cruse , Li Zhang , Scott M. Williams , Xiaoliang Zhuang , Zhuang Li
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： B08B5/00
- IPC分类号： B08B5/00 ; H01J37/32 ; H01L21/67
摘要：
Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.