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    Methods for processing substrates in a dual chamber processing system having shared resources
    2.
    发明授权
    Methods for processing substrates in a dual chamber processing system having shared resources 失效
    在具有共享资源的双室处理系统中处理基板的方法

    公开(公告)号：US08097088B1

    公开(公告)日：2012-01-17

    申请号：US13088791

    申请日：2011-04-18

    Applicant: Eu Jin Lim ,  Adauto Diaz, Jr. ,  Benjamin Schwarz ,  James P. Cruse ,  Charles Hardy

    Inventor： Eu Jin Lim ,  Adauto Diaz, Jr. ,  Benjamin Schwarz ,  James P. Cruse ,  Charles Hardy

    IPC: B08B5/00

    CPC classification number: H01L21/67069 ,  C23C16/4405 ,  H01J37/32082 ,  H01J37/32862 ,  H01J37/32899 ,  Y10S134/902 ,  Y10S438/905

    Abstract: Methods for processing substrates in dual chamber processing systems comprising first and second process chambers that share resources may include performing a first internal chamber clean in each of the first process chamber and the second process chamber; and subsequently processing a substrate in one of the first process chamber or the second process chamber by: providing a substrate to one of the first process chamber or the second process chamber; providing a process gas to the first process chamber and the second process chamber; forming a plasma in only the one of the first process chamber or the second process chamber having the substrate contained therein; and providing an inert gas to the first process chamber and the second process chamber via one or more channels formed in a surface of respective substrate supports disposed in the first process chamber and the second process chamber while processing the substrate.

    Abstract translation: 在包括共享资源的第一和第二处理室的双室处理系统中处理衬底的方法可以包括在第一处理室和第二处理室中的每一个中执行第一内室清洁; 并且随后通过以下步骤来处理第一处理室或第二处理室之一中的衬底：将衬底提供到第一处理室或第二处理室中的一个; 向所述第一处理室和所述第二处理室提供处理气体; 仅在其中包含基板的第一处理室或第二处理室中的一个中形成等离子体; 以及通过形成在设置在第一处理室和第二处理室中的相应基板支撑件的表面中的一个或多个通道，在处理基板的同时，向第一处理室和第二处理室提供惰性气体。

    Method for controlling corrosion of a substrate
    5.
    发明授权
    Method for controlling corrosion of a substrate 有权
    控制基板腐蚀的方法

    公开(公告)号：US08101025B2

    公开(公告)日：2012-01-24

    申请号：US11363833

    申请日：2006-02-27

    Applicant: Eu Jin Lim ,  Chungdee Pong ,  Changhun Lee ,  Mark Kawaguchi ,  Guowen Ding

    Inventor： Eu Jin Lim ,  Chungdee Pong ,  Changhun Lee ,  Mark Kawaguchi ,  Guowen Ding

    IPC: B08B7/04 ,  B08B7/00

    CPC classification number: B08B3/08 ,  B08B7/0035 ,  C23F4/00 ,  H01L21/02071 ,  H01L21/31138 ,  H01L21/32138 ,  H01L28/60 ,  Y10S438/906

    Abstract: A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).

    Abstract translation: 本发明提供一种控制基板腐蚀的方法。 在一个实施例中，一种用于控制衬底腐蚀的方法包括以下步骤：提供具有设置在其上的金属残留物的图案化光致抗蚀剂层的衬底; 将基底暴露于氢基等离子体以除去金属残余物; 并去除光致抗蚀剂。 金属残留物可以包含蚀刻铝或铜中的至少一种的残余物。 金属残留物还可以包含卤素化合物，其用卤素基工艺气体蚀刻含金属层。 氢基等离子体可以包含氢（H 2），并且还可以包含氮（N 2）和水（H 2 O）蒸气中的至少一种。 氢基等离子体还可以包含惰性气体，例如氩（Ar）。

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