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9 条记录 (耗时 0.037 秒)

    PHOTOSENSITIVE COCKPIT WINDSHIELD
    5.
    发明申请
    PHOTOSENSITIVE COCKPIT WINDSHIELD 审中-公开
    摄影作品

    公开(公告)号：US20110209319A1

    公开(公告)日：2011-09-01

    申请号：US13107949

    申请日：2011-05-15

    申请人： Scott M. Williams

    发明人： Scott M. Williams

    IPC分类号： B23P6/00

    CPC分类号： B64C1/1492 ,  Y10T29/49718

    摘要： The present invention 10 discloses a cockpit windshield with photosensitive glass that automatically and instantaneously converts from transparent state to dark state in response to, e.g., lightning strikes 16. The user may disable the photosensitive windshield by means of a power switch 22. In a preferred element of the photosensitive windshield, a variable control module 20 can be used to set parameters to suit each application and to accommodate user preference. In addition to a power switch 20 that enables and disables the photosensitive circuit, the control module provides means for the user to set shade capacity (opacity in dark state) 24, response rate 26 and light sensitivity 28. The control module 20 and windshield 12 are interconnected by means of a wire harness 32 or wireless transmitter/receiver. The system is powered by an external AC or DC power source 34. In another preferred element, the photosensitive control system provides means to control and protect multiple windows 36.

    摘要翻译： 本发明10公开了一种具有感光玻璃的驾驶舱挡风玻璃，其响应于例如雷击16自动并瞬时地从透明状态转换为暗状态。用户可以通过功率开关22来禁用感光挡风玻璃。在优选的 感光挡风玻璃的元件，可变控制模块20可用于设置适合每个应用的参数并适应用户偏好。 除了启用和禁用光敏电路的电源开关20之外，控制模块还提供用于设置遮光能力（暗态不透明度）24，响应速度26和光灵敏度28的装置。控制模块20和挡风玻璃12 通过线束32或无线发射器/接收器相互连接。 该系统由外部AC或DC电源34供电。在另一优选元件中，光敏控制系统提供控制和保护多个窗口36的装置。

    METHOD FOR RECESS ETCHING
    6.
    发明申请
    METHOD FOR RECESS ETCHING 审中-公开
    记忆蚀刻方法

    公开(公告)号：US20080146034A1

    公开(公告)日：2008-06-19

    申请号：US11954981

    申请日：2007-12-12

    申请人： MEIHUA SHEN ,  RONG CHEN ,  Scott M. Williams

    发明人： MEIHUA SHEN ,  RONG CHEN ,  Scott M. Williams

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3065 ,  H01L21/30655 ,  H01L29/66636 ,  H01L29/7848

    摘要： Methods for recess etching are provided herein that advantageously improve lateral to vertical etch ratio requirements, thereby enabling deeper recess etching while maintaining relatively shallow vertical etch depths. Such enhanced lateral etch methods advantageously provide benefits for numerous applications where lateral to vertical etch depth ratios are constrained or where recesses or cavities are desired to be formed. In some embodiments, a method of recess etching includes providing a substrate having a structure formed thereon; forming a recess in the substrate at least partially beneath the structure using a first etch process; forming a selective passivation layer on the substrate; and extending the recess in the substrate using a second etch process. The selective passivation layer is generally formed on regions of the substrate adjacent to the structure but generally not within the recess. The first and second etch processes may be the same or different.

    摘要翻译： 本文提供凹槽蚀刻的方法，其有利地提高了横向垂直蚀刻比要求，从而实现更深的凹槽蚀刻，同时保持较浅的垂直蚀刻深度。 这种增强的横向蚀刻方法有利地为许多应用提供了优点，其中横向到垂直蚀刻深度比被约束或者需要形成凹部或空腔。 在一些实施例中，凹陷蚀刻的方法包括提供其上形成有结构的基板; 使用第一蚀刻工艺在所述结构的至少部分下方在所述衬底中形成凹部; 在衬底上形成选择性钝化层; 以及使用第二蚀刻工艺在所述衬底中延伸所述凹部。 选择性钝化层通常形成在与结构相邻的基底的区域上，但通常不在凹部内。 第一和第二蚀刻工艺可以相同或不同。

    Nitride open etch process based on trifluoromethane and sulfur hexafluoride
    9.
    发明授权
    Nitride open etch process based on trifluoromethane and sulfur hexafluoride 失效

    公开(公告)号：US06589879B2

    公开(公告)日：2003-07-08

    申请号：US09766187

    申请日：2001-01-18

    申请人： Scott M. Williams ,  Wei Liu ,  David Mui

    发明人： Scott M. Williams ,  Wei Liu ,  David Mui

    IPC分类号： H01L21302

    CPC分类号： H01L21/31116 ,  H01L21/3065 ,  H01L21/3081

    摘要： A nitride etch process particularly useful when integrated with a silicon trench etch needing a sloping silicon surface adjacent to the interface between the silicon and an oxide layer intermediate the silicon and nitride. The nitride etch process is a plasma process having an etching gas mixture of sulfur hexafluoride (SF6) and trifluoromethane (CHF3) although nitrogen or oxygen may be added for additional controls. The trifluoromethane is believed to create a polymer passivation on the sidewalls of the hole being etched which, when the etch reaches the oxide-silicon interface, protects the interface and underlying silicon. The nitride etch may proceed through the oxide or a separate fluorocarbon-based oxide etching step may be performed before a bromine-based etch of the silicon starts.