利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.029 秒)

    THIN HEATED SUBSTRATE SUPPORT
    1.
    发明申请
    THIN HEATED SUBSTRATE SUPPORT 审中-公开
    加热底板支撑

    公开(公告)号：US20130334199A1

    公开(公告)日：2013-12-19

    申请号：US13985497

    申请日：2012-02-09

    申请人： Imad Yousif ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Aniruddha Pal ,  Jared Ahmad Lee

    发明人： Imad Yousif ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Aniruddha Pal ,  Jared Ahmad Lee

    IPC分类号： H01L21/263 ,  H05B3/00

    CPC分类号： H01L21/67103 ,  H01L21/263 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6838 ,  H01L21/68792 ,  H05B3/00

    摘要： Embodiments of the present invention provide an apparatus heating and supporting a substrate in a processing chamber. One embodiment of the present invention provides a substrate support assembly. The substrate support assembly includes a heated plate having a substrate supporting surface on a front side and a cantilever arm extending from a backside of the heated plate. The heated plate is configured to support and heat a substrate on the substrate supporting surface. The cantilever arm has a first end attached to the heated plate near a central axis of the heated plate, and a second end extending radially outwards from the central axis.

    摘要翻译： 本发明的实施例提供一种在处理室中加热和支撑衬底的装置。 本发明的一个实施例提供一种基板支撑组件。 基板支撑组件包括加热板，其具有在前侧上的基板支撑表面和从加热板的后侧延伸的悬臂。 加热板被配置为支撑和加热基板支撑表面上的基板。 悬臂具有附接到加热板附近加热板的中心轴线的第一端和从中心轴径向向外延伸的第二端。

    METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER
    3.
    发明申请
    METHOD AND APPARATUS FOR CONTROLLING GAS FLOW TO A PROCESSING CHAMBER 有权
    用于控制气体流向加工室的方法和装置

    公开(公告)号：US20080202588A1

    公开(公告)日：2008-08-28

    申请号：US11678623

    申请日：2007-02-26

    申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    IPC分类号： F17D3/00

    CPC分类号： C23C16/52 ,  C23C16/4412 ,  C23C16/455 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/0318 ,  Y10T137/0324 ,  Y10T137/87249

    摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

    摘要翻译： 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出管线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个出口，使一个或多个气体通过歧管流过真空环境，旁通处理室 在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。

    ABATEMENT AND STRIP PROCESS CHAMBER IN A DUAL LOADLOCK CONFIGURATION
    9.
    发明申请
    ABATEMENT AND STRIP PROCESS CHAMBER IN A DUAL LOADLOCK CONFIGURATION 审中-公开
    双重加载配置中的消费和条带处理室

    公开(公告)号：US20130337655A1

    公开(公告)日：2013-12-19

    申请号：US14002087

    申请日：2012-02-29

    申请人： Jared Ahmad Lee ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Imad Yousif ,  Aniruddha Pal

    发明人： Jared Ahmad Lee ,  Martin Jeffrey Salinas ,  Paul B. Reuter ,  Imad Yousif ,  Aniruddha Pal

    IPC分类号： H01L21/3065 ,  H01L21/67

    CPC分类号： H01L21/3065 ,  H01J37/32844 ,  H01L21/02071 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/68785 ,  Y02C20/30 ,  Y02P70/605

    摘要： Embodiments of the present invention provide a dual load lock chamber capable of processing a substrate. In one embodiment, the dual load lock chamber includes a chamber body defining a first chamber volume and a second chamber volume isolated from one another. Each of the lower and second chamber volumes is selectively connectable to two processing environments through two openings configured for substrate transferring. The dual load lock chamber also includes a heated substrate support assembly disposed in the second chamber volume. The heated substrate support assembly is configured to support and heat a substrate thereon. The dual load lock chamber also includes a remote plasma source connected to the second chamber volume for supplying a plasma to the second chamber volume.

    摘要翻译： 本发明的实施例提供一种能够处理基板的双载荷锁定室。 在一个实施例中，双负载锁定室包括限定第一室容积的室主体和彼此隔离的第二室容积。 下部和第二腔室容积中的每一个通过构造成用于衬底转移的两个开口选择性地连接到两个处理环境。 双负载锁定室还包括设置在第二室容积中的加热的衬底支撑组件。 被加热的衬底支撑组件构造成在其上支撑和加热衬底。 双负载锁定室还包括连接到第二室容积的远程等离子体源，用于将等离子体供应到第二室容积。

    ABATEMENT AND STRIP PROCESS CHAMBER IN A LOAD LOCK CONFIGURATION
    10.
    发明申请
    ABATEMENT AND STRIP PROCESS CHAMBER IN A LOAD LOCK CONFIGURATION 审中-公开
    一个负载锁定配置中的消费和条带过程室

    公开(公告)号：US20130224953A1

    公开(公告)日：2013-08-29

    申请号：US13746831

    申请日：2013-01-22

    申请人： Martin Jeffrey SALINAS ,  Paul B. REUTER ,  Andrew NGUYEN ,  Jared Ahmad LEE

    发明人： Martin Jeffrey SALINAS ,  Paul B. REUTER ,  Andrew NGUYEN ,  Jared Ahmad LEE

    IPC分类号： H01L21/306

    摘要： Embodiments of the present invention a load lock chamber including two or more isolated chamber volumes, wherein one chamber volume is configured for processing a substrate and another chamber volume is configured to provide cooling to a substrate. One embodiment of the present invention provides a load lock chamber having at least two isolated chamber volumes formed in a chamber body assembly. The at least two isolated chamber volumes may be vertically stacked. A first chamber volume may be used to process a substrate disposed therein using reactive species. A second chamber volume may include a cooled substrate support.

    摘要翻译： 本发明的实施例是一种包括两个或多个隔离室容积的负载锁定室，其中一个室容积被配置用于处理衬底，另一个室体积被配置为向衬底提供冷却。 本发明的一个实施例提供了一种装载锁定室，其具有形成在室主体组件中的至少两个隔离室容积。 至少两个隔离室容积可以垂直堆叠。 可以使用第一室容积来处理其中使用反应物种的衬底。 第二室容积可以包括冷却的基底支撑件。