公开(公告)号：US20110304078A1

公开(公告)日：2011-12-15

申请号：US13014800

申请日：2011-01-27

Applicant: JARED AHMAD LEE ,  BENJAMIN SCHWARZ ,  XIAOLIANG ZHUANG ,  EU JIN LIM ,  ADUATO DIAZ, JR. ,  SCOTT M. WILLIAMS ,  ANDREW NGUYEN ,  JAMES P. CRUSE

Inventor： JARED AHMAD LEE ,  BENJAMIN SCHWARZ ,  XIAOLIANG ZHUANG ,  EU JIN LIM ,  ADUATO DIAZ, JR. ,  SCOTT M. WILLIAMS ,  ANDREW NGUYEN ,  JAMES P. CRUSE

IPC: B29C71/00

CPC classification number: H01L21/67201

Abstract: Methods for removing process byproducts from a load lock chamber are provided herein. In some embodiments, a method for removing process byproducts from a load lock chamber may include: performing a process on a substrate disposed within a process chamber; transferring the substrate from the process chamber to a load lock chamber; and providing an inert gas to the load lock chamber via at least one gas line while transferring the substrate from the process chamber to the load lock chamber to remove process byproducts from the load lock chamber.

Abstract translation: 本文提供了从负载锁定室去除过程副产物的方法。 在一些实施方案中，用于从负载锁定室除去过程副产物的方法可以包括：在设置在处理室内的衬底上进行处理; 将衬底从处理室转移到负载锁定室; 以及通过至少一条气体管线向所述负载锁定室提供惰性气体，同时将所述衬底从所述处理室转移到所述负载锁定室以从所述负载锁定室移除过程副产物。

公开(公告)号：US08992689B2

公开(公告)日：2015-03-31

申请号：US13408703

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B5/00 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32357 ,  H01L21/67201

Abstract: Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Abstract translation: 提供从底物中除去含卤素残基的方法。 通过结合加热和等离子体消除步骤，可以提高制造产量。 此外，通过适当地控制减压室中的压力，也可以提高除去效率。

公开(公告)号：US08845816B2

公开(公告)日：2014-09-30

申请号：US13408709

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B5/00 ,  C23C16/44

CPC classification number: B08B5/00 ,  C23C16/44 ,  C23C16/4408 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32862 ,  Y10T137/0419

Abstract: Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

Abstract translation: 提供减少气体分布板污染的方法。 在一个实施例中，一种用于处理衬底的方法包括将衬底转移到腔室中，在衬底上执行处理过程，并且在处理过程之前或之后向室中提供净化气体，以相对于处理 过程从房间。 处理过程包括通过气体分配板将反应气体分配到室中。

公开(公告)号：US20120222699A1

公开(公告)日：2012-09-06

申请号：US13408703

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B7/04 ,  B08B5/00

CPC classification number: H01J37/32357 ,  H01L21/67201

Abstract: Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Abstract translation: 提供了从底物中除去含卤素残基的方法。 通过结合加热和等离子体消除步骤，可以提高制造产量。 此外，通过适当地控制减压室中的压力，也可以提高除去效率。

公开(公告)号：US20120222752A1

公开(公告)日：2012-09-06

申请号：US13408709

申请日：2012-02-29

Applicant: Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

Inventor： Adauto Diaz ,  Andrew Nguyen ,  Benjamin Schwarz ,  Eu Jin Lim ,  Jared Ahmad Lee ,  James P. Cruse ,  Li Zhang ,  Scott M. Williams ,  Xiaoliang Zhuang ,  Zhuang Li

IPC: B08B5/00

CPC classification number: B08B5/00 ,  C23C16/44 ,  C23C16/4408 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32862 ,  Y10T137/0419

Abstract: Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

Abstract translation: 提供减少气体分布板污染的方法。 在一个实施例中，一种用于处理衬底的方法包括将衬底转移到腔室中，在衬底上执行处理过程，并且在处理过程之前或之后向室中提供净化气体，以相对于处理 过程从房间。 处理过程包括通过气体分配板将反应气体分配到室中。

公开(公告)号：US20100076729A1

公开(公告)日：2010-03-25

申请号：US12233838

申请日：2008-09-19

Applicant: MATTHEW F. DAVIS ,  LEI LIAN ,  XIAOLIANG ZHUANG ,  QUENTIN E. WALKER

Inventor： MATTHEW F. DAVIS ,  LEI LIAN ,  XIAOLIANG ZHUANG ,  QUENTIN E. WALKER

IPC: G06F15/00

CPC classification number: H01L21/67276 ,  G05B23/0283

Abstract: Methods and apparatus for predictive maintenance of semiconductor process equipment are provided herein. In some embodiments, a method of performing predictive maintenance on semiconductor processing equipment may include performing at least one self-diagnostic test on the semiconductor processing equipment with no substrate present in the equipment. The self-diagnostic test may include measuring one or more predictor parameters and one or more response parameters from the semiconductor process equipment. One or more expected response parameters may be calculated based upon the measured predictor parameters utilizing a predictive model. The one or more measured response parameters may be compared with the one or more expected response parameters. A determination may be made whether equipment maintenance is required based upon the comparison.

Abstract translation: 本文提供了半导体工艺设备预测维护的方法和装置。 在一些实施例中，对半导体处理设备执行预测维护的方法可以包括在半导体处理设备上执行至少一个自诊断测试，而不存在设备中的衬底。 自诊断测试可以包括测量来自半导体处理设备的一个或多个预测参数和一个或多个响应参数。 可以基于使用预测模型的测量的预测参数来计算一个或多个预期响应参数。 一个或多个测量的响应参数可以与一个或多个预期响应参数进行比较。 可以基于比较来确定是否需要设备维护。