发明授权
US09053980B2 Monolithic integration of photonics and electronics in CMOS processes
有权
光电子学与电子学在CMOS工艺中的整体集成
- 专利标题: Monolithic integration of photonics and electronics in CMOS processes
- 专利标题(中): 光电子学与电子学在CMOS工艺中的整体集成
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申请号: US13364845申请日: 2012-02-02
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公开(公告)号: US09053980B2公开(公告)日: 2015-06-09
- 发明人: Thierry Pinguet , Steffen Gloeckner , Peter De Dobbelaere , Sherif Abdalla , Daniel Kucharski , Gianlorenzo Masini , Kosei Yokoyama , Guckenberger John , Attila Mekis
- 申请人: Thierry Pinguet , Steffen Gloeckner , Peter De Dobbelaere , Sherif Abdalla , Daniel Kucharski , Gianlorenzo Masini , Kosei Yokoyama , Guckenberger John , Attila Mekis
- 申请人地址: US CA Carlsbad
- 专利权人: Luxtera, Inc.
- 当前专利权人: Luxtera, Inc.
- 当前专利权人地址: US CA Carlsbad
- 代理机构: McAndrews, Held & Malloy
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L21/782 ; H01L21/84
摘要:
Methods and systems for monolithic integration of photonics and electronics in CMOS processes are disclosed and may include fabricating photonic and electronic devices on two CMOS wafers with different silicon layer thicknesses for the photonic and electronic devices with at least a portion of each of the wafers bonded together, where a first of the CMOS wafers includes the photonic devices and a second of the CMOS wafers includes the electronic devices. The electrical devices may be coupled to optical devices utilizing through-silicon vias. The different thicknesses may be fabricated utilizing a selective area growth process. Cladding layers may be fabricated utilizing oxygen implants and/or utilizing CMOS trench oxide on the CMOS wafers. Silicon may be deposited on the CMOS trench oxide utilizing epitaxial lateral overgrowth. Cladding layers may be fabricated utilizing selective backside etching. Reflective surfaces may be fabricated by depositing metal on the selectively etched regions.