发明授权
US09058455B2 Backside integration of RF filters for RF front end modules and design structure 有权
用于RF前端模块的RF滤波器的背面集成和设计结构

Backside integration of RF filters for RF front end modules and design structure
摘要:
A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.
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