Invention Grant
- Patent Title: Vialess memory structure and method of manufacturing same
- Patent Title (中): 无记忆结构及其制造方法
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Application No.: US13154346Application Date: 2011-06-06
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Publication No.: US09082695B2Publication Date: 2015-07-14
- Inventor: Kimihiro Satoh , Yiming Huai , Jing Zhang
- Applicant: Kimihiro Satoh , Yiming Huai , Jing Zhang
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agent Maryam Imam; Bing K. Yen
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/8246 ; H01L43/12 ; H01L27/115 ; H01L27/22 ; H01L43/08
Abstract:
A method of manufacturing a magnetic memory cell, including a magnetic tunnel junction (MTJ), includes using silicon nitride layer and silicon oxide layer to form a trench for depositing copper to be employed for connecting the MTJ to other circuitry without the use of a via.
Public/Granted literature
- US20120306033A1 VIALESS MEMORY STRUCTURE AND METHOD OF MANUFACTURING SAME Public/Granted day:2012-12-06
Information query
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