Invention Grant
- Patent Title: Methods of transferring semiconductor elements and manufacturing semiconductor devices
- Patent Title (中): 传输半导体元件和制造半导体器件的方法
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Application No.: US14077956Application Date: 2013-11-12
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Publication No.: US09082844B2Publication Date: 2015-07-14
- Inventor: Eun-hyoung Cho , Jun-Hee Choi , Jin-seung Sohn , Chang-youl Moon
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0021383 20130227
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/78 ; H01L33/00 ; H01L21/02 ; H01L21/28 ; H01L21/82 ; H01L33/02 ; H01L33/32
Abstract:
The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements.
Public/Granted literature
- US20140242782A1 METHODS OF TRANSFERRING SEMICONDUCTOR ELEMENTS AND MANUFACTURING SEMICONDUCTOR DEVICES Public/Granted day:2014-08-28
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