公开(公告)号：US09136353B2

公开(公告)日：2015-09-15

申请号：US13713589

申请日：2012-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Hee Choi ,  Andrei Zoulkarneev

IPC: H01L29/04 ,  H01L31/036 ,  H01L29/76 ,  H01L31/112 ,  H01L29/66 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/6675 ,  H01L21/02667 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78672 ,  H01L29/78678

Abstract: A method of forming polysilicon, a thin film transistor (TFT) using the polysilicon, and a method of fabricating the TFT are disclosed. The method of forming the polysilicon comprises: forming an insulating layer on a substrate; forming a first electrode and a second electrode on the insulating layer; forming at least one heater layer on the insulating layer so as to connect the first electrode and the second electrode; forming an amorphous material layer containing silicon on the heater layer(s); forming a through-hole under the heater layer(s) by etching the insulating layer; and crystallizing the amorphous material layer into a polysilicon layer by applying a voltage between the first electrode and the second electrode so as to heat the heater layer(s).

Abstract translation: 公开了一种形成多晶硅的方法，使用多晶硅的薄膜晶体管（TFT）和制造该TFT的方法。 形成多晶硅的方法包括：在衬底上形成绝缘层; 在所述绝缘层上形成第一电极和第二电极; 在所述绝缘层上形成至少一个加热层，以连接所述第一电极和所述第二电极; 在所述加热器层上形成含有硅的非晶材料层; 通过蚀刻绝缘层在加热器层下形成通孔; 以及通过在所述第一电极和所述第二电极之间施加电压以将所述非晶材料层结晶成多晶硅层，以加热所述加热层。

公开(公告)号：US09082844B2

公开(公告)日：2015-07-14

申请号：US14077956

申请日：2013-11-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-hyoung Cho ,  Jun-Hee Choi ,  Jin-seung Sohn ,  Chang-youl Moon

IPC: H01L21/00 ,  H01L21/78 ,  H01L33/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/82 ,  H01L33/02 ,  H01L33/32

CPC classification number: H01L21/7806 ,  H01L21/02343 ,  H01L21/28 ,  H01L21/82 ,  H01L23/3192 ,  H01L27/153 ,  H01L31/035281 ,  H01L31/03926 ,  H01L31/1848 ,  H01L31/1856 ,  H01L31/1892 ,  H01L31/1896 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016 ,  H01S5/0217 ,  H01S5/32341 ,  Y02E10/544 ,  Y02P70/521

Abstract: The present disclosure relates to a method of transferring semiconductor elements from a non-flexible substrate to a flexible substrate. The present disclosure also relates to a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. The semiconductor elements grown or formed on a non-flexible substrate may be effectively transferred to a resin layer while maintaining an arrangement of the semiconductor elements. The resin layer may function as a flexible substrate for supporting the vertical semiconductor elements.

Abstract translation: 本公开涉及将半导体元件从非柔性基板转移到柔性基板的方法。 本公开还涉及一种基于传送半导体元件的方法制造柔性半导体器件的方法。 在非柔性基板上生长或形成的半导体元件可以有效地转移到树脂层，同时保持半导体元件的布置。 树脂层可以用作用于支撑垂直半导体元件的柔性基板。