Invention Grant
- Patent Title: Method and system for controlling a spike anneal process
- Patent Title (中): 用于控制尖峰退火工艺的方法和系统
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Application No.: US13662524Application Date: 2012-10-28
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Publication No.: US09085045B2Publication Date: 2015-07-21
- Inventor: Steven Scheer , Michael A. Carcasi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/20 ; H01L21/36 ; H01L21/44 ; B23K26/00 ; H01L21/268 ; H01L21/324 ; H01L21/67
Abstract:
Provided is a method and system for controlling a spike anneal process on a substrate, comprising selecting one or more objectives, one or more absorbance layers, a technique of modifying absorption of the selected one or more absorbance layers, one or more wavelengths used in a heating device. A substrate modified with the selected technique of modifying absorption is provided. The spike anneal process is performed on the substrate using the selected heating device and selected spike anneal process variables. One or more of the spike anneal process variables, the selected technique of the modifying absorption, the selected one or more wavelengths, and/or the selected heating device are adjusted in order to meet the one or more objectives of the spike anneal process.
Public/Granted literature
- US20130288487A1 METHOD AND SYSTEM FOR CONTROLLING A SPIKE ANNEAL PROCESS Public/Granted day:2013-10-31
Information query
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