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    Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
    1.
    发明授权
    Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists 有权

    公开(公告)号：US12165870B2

    公开(公告)日：2024-12-10

    申请号：US16030153

    申请日：2018-07-09

    Applicant: Tokyo Electron Limited

    Inventor： Steven Scheer ,  Michael A. Carcasi ,  Benjamen M. Rathsack ,  Mark H. Somervell ,  Joshua S. Hooge

    IPC: G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01L21/027

    Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films (e.g., photoresist on anti-reflective coatings) on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV or UV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located in the film stack. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

    Method and system for controlling a spike anneal process
    3.
    发明授权
    Method and system for controlling a spike anneal process 有权
    用于控制尖峰退火工艺的方法和系统

    公开(公告)号：US09085045B2

    公开(公告)日：2015-07-21

    申请号：US13662524

    申请日：2012-10-28

    Applicant: Tokyo Electron Limited

    Inventor： Steven Scheer ,  Michael A. Carcasi

    IPC: H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/44 ,  B23K26/00 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67

    CPC classification number: H01L21/324 ,  B23K26/352 ,  H01L21/268 ,  H01L21/67103 ,  H01L21/67115

    Abstract: Provided is a method and system for controlling a spike anneal process on a substrate, comprising selecting one or more objectives, one or more absorbance layers, a technique of modifying absorption of the selected one or more absorbance layers, one or more wavelengths used in a heating device. A substrate modified with the selected technique of modifying absorption is provided. The spike anneal process is performed on the substrate using the selected heating device and selected spike anneal process variables. One or more of the spike anneal process variables, the selected technique of the modifying absorption, the selected one or more wavelengths, and/or the selected heating device are adjusted in order to meet the one or more objectives of the spike anneal process.

    Abstract translation: 提供了一种用于控制衬底上的尖峰退火工艺的方法和系统，包括选择一个或多个目标，一个或多个吸收层，修饰所选择的一个或多个吸收层的吸收的技术，一个或多个波长 加热装置。 提供了用所选择的改性吸收技术改性的底物。 使用所选择的加热装置和选定的尖峰退火工艺变量在基板上进行尖峰退火工艺。 调整一个或多个尖峰退火工艺变量，所选择的修饰吸收的技术，所选择的一个或多个波长和/或所选择的加热装置，以便满足尖峰退火工艺的一个或多个目标。

    Line pattern collapse mitigation through gap-fill material application
    4.
    发明授权
    Line pattern collapse mitigation through gap-fill material application 有权
    通过间隙填充材料应用减少线路崩溃

    公开(公告)号：US09454081B2

    公开(公告)日：2016-09-27

    申请号：US14323664

    申请日：2014-07-03

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Mark H Somervell ,  Benjamen M Rathsack ,  Ian J Brown ,  Steven Scheer ,  Joshua S Hooge

    IPC: H01L21/3105 ,  G03F7/40 ,  G03F7/30 ,  G03F7/038 ,  G03F7/20 ,  G03F7/38

    CPC classification number: G03F7/405 ,  G03F7/038 ,  G03F7/0384 ,  G03F7/2024 ,  G03F7/30 ,  G03F7/38 ,  G03F7/40

    Abstract: Disclosed is a method and apparatus for mitigation of photoresist line pattern collapse in a photolithography process by applying a gap-fill material treatment after the post-development line pattern rinse step. The gap-fill material dries into a solid layer filling the inter-line spaces of the line pattern, thereby preventing line pattern collapse due to capillary forces during the post-rinse line pattern drying step. Once dried, the gap-fill material is depolymerized, volatilized, and removed from the line pattern by heating, illumination with ultraviolet light, by application of a catalyst chemistry, or by plasma etching.

    Abstract translation: 公开了一种用于通过在显影后图案漂洗步骤之后施加间隙填充材料处理来减轻光刻工艺中的光致抗蚀剂线图案塌陷的方法和装置。 间隙填充材料干燥成填充线图案的间隔空间的固体层，从而防止在后冲洗线图案干燥步骤期间由于毛细管力引起的线图案塌陷。 一旦干燥，间隙填充材料通过加热，用紫外线照射，通过施加催化剂化学或通过等离子体蚀刻从线图案解聚，挥发和除去。

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