Invention Grant
- Patent Title: Methods of forming secured metal gate antifuse structures
- Patent Title (中): 形成固定金属门反熔丝结构的方法
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Application No.: US14134097Application Date: 2013-12-19
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Publication No.: US09123724B2Publication Date: 2015-09-01
- Inventor: Xianghong Tong , Zhanping Chen , Walid M. Hafez , Zhiyong Ma , Sarvesh H. Kulkarni , Kevin X. Zhang , Matthew B. Pedersen , Kevin D. Johnson
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Forefront IP Lawgroup, PLLC
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L29/04 ; H01L21/02 ; H01L23/58 ; H01L23/525 ; H01L27/02 ; H01L27/112 ; H01L27/06 ; H01L21/44 ; H01L29/861
Abstract:
Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.
Public/Granted literature
- US20140103448A1 METHODS OF FORMING SECURED METAL GATE ANTIFUSE STRUCTURES Public/Granted day:2014-04-17
Information query
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