公开(公告)号：US09123724B2

公开(公告)日：2015-09-01

申请号：US14134097

申请日：2013-12-19

Applicant: Intel Corporation

Inventor： Xianghong Tong ,  Zhanping Chen ,  Walid M. Hafez ,  Zhiyong Ma ,  Sarvesh H. Kulkarni ,  Kevin X. Zhang ,  Matthew B. Pedersen ,  Kevin D. Johnson

IPC: H01L27/11 ,  H01L29/04 ,  H01L21/02 ,  H01L23/58 ,  H01L23/525 ,  H01L27/02 ,  H01L27/112 ,  H01L27/06 ,  H01L21/44 ,  H01L29/861

CPC classification number: H01L23/5252 ,  H01L21/44 ,  H01L27/0207 ,  H01L27/0629 ,  H01L27/11206 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

Abstract translation: 描述了形成和使用微电子结构的方法。 实施例包括在金属熔丝栅极和PMOS器件之间形成二极管，其中二极管设置在金属熔丝栅极的触点和PMOS器件的触点之间，并且其中二极管将金属熔丝栅极的触点耦合到 PMOS器件的接触。

公开(公告)号：US09922720B2

公开(公告)日：2018-03-20

申请号：US13788028

申请日：2013-03-07

Applicant: Intel Corporation

Inventor： Jason G. Sandri ,  Horaira Abu ,  Charles A. Peterson ,  Matthew B. Pedersen ,  Brian Harris ,  Ian S. Walker ,  Monib Ahmed

IPC: G11C17/00 ,  G11C17/16 ,  G06F21/75 ,  G06F21/76 ,  G06F21/79 ,  G06F12/14 ,  G06F11/10 ,  G11C7/24 ,  G11C8/06 ,  G11C17/18 ,  G06F21/64 ,  G06F21/78 ,  G11C29/44

CPC classification number: G11C17/16 ,  G06F11/10 ,  G06F12/1408 ,  G06F21/64 ,  G06F21/75 ,  G06F21/755 ,  G06F21/76 ,  G06F21/78 ,  G06F21/79 ,  G11C7/24 ,  G11C8/06 ,  G11C17/18 ,  G11C2029/4402

Abstract: In accordance with some embodiments, the way in which the fuses are sensed and, particularly, their order may be made more random so that it is much more difficult to simply exercise the device and determine all the values of the storage elements within the fuse array. One result is a more secure storage device.