Invention Grant
US09129823B2 Silicon recess ETCH and epitaxial deposit for shallow trench isolation (STI)
有权
硅凹槽ETCH和用于浅沟槽隔离（STI）的外延沉积
- Patent Title: Silicon recess ETCH and epitaxial deposit for shallow trench isolation (STI)
- Patent Title (中): 硅凹槽ETCH和用于浅沟槽隔离（STI）的外延沉积
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Application No.: US13854507Application Date: 2013-04-01
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Publication No.: US09129823B2Publication Date: 2015-09-08
- Inventor: Harry-Hak-Lay Chuang , Bao-Ru Young , Wei Cheng Wu , Kong-Pin Chang , Chia Ming Liang , Meng-Fang Hsu , Ching-Feng Fu , Shih-Ting Hung
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L29/06 ; H01L21/762 ; H01L29/66 ; H01L21/8234 ; H01L27/088 ; H01L29/78
Abstract:
The embodiments described provide methods and semiconductor device areas for etching an active area region on a semiconductor body and epitaxially depositing a semiconductor layer overlying the active region. The methods enable the mitigation or elimination of problems encountered in subsequent manufacturing associated with STI divots.
Public/Granted literature
- US20140264725A1 SILICON RECESS ETCH AND EPITAXIAL DEPOSIT FOR SHALLOW TRENCH ISOLATION (STI) Public/Granted day:2014-09-18
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