Invention Grant
- Patent Title: Semiconductor memory devices and methods of fabricating the same
- Patent Title (中): 半导体存储器件及其制造方法
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Application No.: US13800872Application Date: 2013-03-13
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Publication No.: US09130054B2Publication Date: 2015-09-08
- Inventor: Byong-hyun Jang , Juhyung Kim , Woonkyung Lee , Jaegoo Lee , Chaeho Kim , Junkyu Yang , Phil Ouk Nam , Jaeyoung Ahn , Kihyun Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L29/792 ; H01L29/66 ; H01L27/115
Abstract:
A semiconductor memory device and a method of fabricating the same. The device includes a plurality of gates vertically stacked on a top surface of a substrate with an epitaxial layer formed in the substrate, a vertical channel vertically penetrating the gates to be electrically connected to the epitaxial layer, and a memory layer provided between the vertical channel and the gates. The epitaxial layer has a top surface positioned at a level between a bottom surface of the lowermost one of the gates and the top surface of the substrate.
Public/Granted literature
- US20140035026A1 SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2014-02-06
Information query
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