发明授权
- 专利标题: n-Type doped organic materials and methods therefor
- 专利标题(中): n型掺杂有机材料及其方法
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申请号: US13080564申请日: 2011-04-05
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公开(公告)号: US09133130B2公开(公告)日: 2015-09-15
- 发明人: Peng Wei , Zhenan Bao
- 申请人: Peng Wei , Zhenan Bao
- 申请人地址: US CA Palo Alto
- 专利权人: The Board of Trustees of the Leland Stanford Junior University
- 当前专利权人: The Board of Trustees of the Leland Stanford Junior University
- 当前专利权人地址: US CA Palo Alto
- 代理机构: Crawford Maunu PLLC
- 主分类号: H01L51/00
- IPC分类号: H01L51/00 ; H01L51/05 ; H01L51/52 ; C07D235/18 ; B82Y10/00 ; B82Y30/00 ; C07D409/04 ; C07D409/14
摘要:
In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below −2.5 eV to effect such n-type doping.
公开/授权文献
- US20110240980A1 n-Type Doped Organic Materials and Methods Therefor 公开/授权日:2011-10-06