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    AIR-STABLE N-CHANNEL ORGANIC ELECTRONIC DEVICES
    1.
    发明申请
    AIR-STABLE N-CHANNEL ORGANIC ELECTRONIC DEVICES 有权
    空气稳定的N沟道有机电子器件

    公开(公告)号：US20110248267A1

    公开(公告)日：2011-10-13

    申请号：US13079879

    申请日：2011-04-05

    申请人： Peng Wei ,  Zhenan Bao ,  Joon Hak Oh

    发明人： Peng Wei ,  Zhenan Bao ,  Joon Hak Oh

    IPC分类号： H01L21/22 ,  H01L29/04

    CPC分类号： H01L51/002 ,  B82Y10/00 ,  H01L51/0047 ,  H01L51/0094 ,  H01L51/0525 ,  H01L51/0545

    摘要： In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air. The organic material is doped with an n-type dopant that, when combined with the organic material, effects air stability for the doped organic material (e.g., exhibits a mobility that facilitates stable operation in air, such as may be similar to operation in inert environments). Other embodiments are directed to organic electronic devices n-doped and exhibiting such air stability.

    摘要翻译： 结合各种示例实施例，有机电子器件被提供有有机材料，其由于电子电荷载体响应于暴露于空气而被俘获而易于降低迁移率。 有机材料掺杂有n型掺杂剂，当与有机材料组合时，掺杂的有机材料具有空气稳定性（例如，表现出促进在空气中稳定运行的迁移率，例如可以类似于在惰性中的操作） 环境）。 其他实施方案涉及n掺杂并表现出这种空气稳定性的有机电子器件。

    n-Type doped organic materials and methods therefor
    2.
    发明授权
    n-Type doped organic materials and methods therefor 有权
    n型掺杂有机材料及其方法

    公开(公告)号：US09133130B2

    公开(公告)日：2015-09-15

    申请号：US13080564

    申请日：2011-04-05

    申请人： Peng Wei ,  Zhenan Bao

    发明人： Peng Wei ,  Zhenan Bao

    IPC分类号： H01L51/00 ,  H01L51/05 ,  H01L51/52 ,  C07D235/18 ,  B82Y10/00 ,  B82Y30/00 ,  C07D409/04 ,  C07D409/14

    CPC分类号： C07D235/18 ,  B82Y10/00 ,  B82Y30/00 ,  C07D409/04 ,  C07D409/14 ,  H01L51/0047 ,  H01L51/0048 ,  H01L51/005 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/0566 ,  H01L51/5004 ,  H01L51/5296 ,  Y02E10/549 ,  Y02P70/521

    摘要： In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below −2.5 eV to effect such n-type doping.

    摘要翻译： 根据各种实施方案，有机电子器件包括n型掺杂剂材料，其包括在氮原子之间键合有氢基材料的咪唑类材料。 n型掺杂剂材料掺杂有机材料，并且可以用于减轻由于诸如暴露于环境大气的条件而导致的迁移率的降低，这可能导致电荷传输的不期望的减少。 其他实施方案涉及具有这种类型的n型掺杂剂的碳纳米管或石墨烯结构，其中碳纳米管或石墨烯结构的费米能级低于-2.5eV以实现这种n型掺杂。

    Air-stable n-channel organic electronic devices
    3.
    发明授权
    Air-stable n-channel organic electronic devices 有权
    空气稳定的n沟道有机电子器件

    公开(公告)号：US09040400B2

    公开(公告)日：2015-05-26

    申请号：US13079879

    申请日：2011-04-05

    申请人： Peng Wei ,  Zhenan Bao ,  Joon Hak Oh

    发明人： Peng Wei ,  Zhenan Bao ,  Joon Hak Oh

    IPC分类号： H01L21/22 ,  H01L21/38 ,  H01L51/00 ,  B82Y10/00 ,  H01L51/05

    CPC分类号： H01L51/002 ,  B82Y10/00 ,  H01L51/0047 ,  H01L51/0094 ,  H01L51/0525 ,  H01L51/0545

    摘要： In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air. The organic material is doped with an n-type dopant that, when combined with the organic material, effects air stability for the doped organic material (e.g., exhibits a mobility that facilitates stable operation in air, such as may be similar to operation in inert environments). Other embodiments are directed to organic electronic devices n-doped and exhibiting such air stability.

    摘要翻译： 结合各种示例实施例，有机电子器件被提供有有机材料，其由于电子电荷载体响应于暴露于空气而被俘获而易于降低迁移率。 有机材料掺杂有n型掺杂剂，当与有机材料组合时，掺杂的有机材料具有空气稳定性（例如，表现出促进在空气中稳定运行的迁移率，例如可以类似于在惰性中的操作） 环境）。 其他实施方案涉及n掺杂并表现出这种空气稳定性的有机电子器件。

    Patterning crystalline compounds on surfaces
    9.
    发明授权
    Patterning crystalline compounds on surfaces 失效
    在表面上形成结晶化合物

    公开(公告)号：US07795145B2

    公开(公告)日：2010-09-14

    申请号：US11353934

    申请日：2006-02-15

    申请人： Marcos Gomez ,  Peter Erk ,  Frauke Richter ,  Zhenan Bao ,  Shuhong Liu

    发明人： Marcos Gomez ,  Peter Erk ,  Frauke Richter ,  Zhenan Bao ,  Shuhong Liu

    IPC分类号： H01L21/44

    CPC分类号： H01L51/0003 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L51/0019 ,  H01L51/0068 ,  H01L51/0533 ,  H01L51/0545

    摘要： A method of patterning the surface of a substrate with at least one organic semiconducting compound including: (a) providing a stamp having a surface including a plurality of indentations formed therein defining an indentation pattern contiguous with a stamping surface and defining a stamping pattern, (b) coating the stamping surface with at least one compound (C1) capable of binding to the surface of the substrate and at least one organic semiconducting compound (S), (c) contacting at least a portion of the surface of a substrate with the stamping surface to allow deposition of the compound (C1) on the substrate, (d) removing the stamping surface to provide a pattern of binding sites on the surface of the substrate, (e) applying a plurality of crystallites of the organic semiconducting compound (S) to the surface of the substrate to bind at least a portion of the applied crystallites to the binding sites on the surface of the substrate.

    摘要翻译： 一种利用至少一种有机半导体化合物对衬底的表面进行图案化的方法，包括：（a）提供具有表面的印模，所述表面包括形成在其中的多个凹口，所述压痕限定与冲压表面邻接的压痕图案并限定冲压图案（ b）用至少一种能够结合到基底表面的化合物（C1）和至少一种有机半导体化合物（S）涂覆冲压表面，（c）将基底表面的至少一部分与 冲压表面以允许化合物（C1）沉积在基底上，（d）去除冲压表面以在基底表面上提供结合位点的图案，（e）施加多个有机半导体化合物的微晶（ S）到基底的表面以将至少一部分施加的微晶结合到基底表面上的结合位点。

    OFETs with active channels formed of densified layers
    10.
    发明授权
    OFETs with active channels formed of densified layers 有权
    OFET具有由致密层形成的活动通道

    公开(公告)号：US07767998B2

    公开(公告)日：2010-08-03

    申请号：US10727709

    申请日：2003-12-04

    申请人： Zhenan Bao

    发明人： Zhenan Bao

    IPC分类号： H01L35/24

    CPC分类号： H01L51/0541 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0558

    摘要： The present invention provides apparatus and a method of fabricating the apparatus. The apparatus includes a substrate having a surface and an organic field-effect transistor (OFET) located adjacent the surface of the substrate. The OFET comprising a gate, a channel, a source electrode, and a drain electrode. The channel comprises a densified layer of organic molecules with conjugated multiple bonds, axes of the organic molecules being oriented substantially normal to the surface.

    摘要翻译： 本发明提供了一种装置及其制造方法。 该装置包括具有表面的衬底和位于衬底表面附近的有机场效应晶体管（OFET）。 OFET包括栅极，沟道，源电极和漏电极。 该通道包括具有共轭多重键的有机分子的致密化层，有机分子的轴线基本上垂直于表面。