Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14451671Application Date: 2014-08-05
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Publication No.: US09135958B2Publication Date: 2015-09-15
- Inventor: Shunpei Yamazaki , Jun Koyama , Kiyoshi Kato
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-264623 20091120
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C16/04 ; G11C16/28 ; H01L21/02 ; H01L27/06 ; H01L27/105 ; H01L27/108 ; H01L27/12 ; H01L29/786 ; G11C11/24 ; H01L29/26 ; H01L29/22 ; G11C5/14 ; G11C7/12 ; H01L27/115 ; G11C7/18 ; G11C11/4097
Abstract:
An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description.
Public/Granted literature
- US20140340953A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-11-20
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