Invention Grant
- Patent Title: Staggered programming for resistive memories
- Patent Title (中): 电阻存储器的交错编程
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Application No.: US14165265Application Date: 2014-01-27
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Publication No.: US09164894B2Publication Date: 2015-10-20
- Inventor: Gerald Barkley , Sunil Shetty , Andrea Martinelli
- Applicant: Micron Technology Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Knobbe Martens Olson and Bear LLP
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02 ; G11C13/00

Abstract:
Subject matter disclosed herein relates to a memory device and method of programming same. In some embodiments, a memory device can be programmed by partitioning information into a plurality of chunks. Partitioning can be performed by determining a pattern of logic ones and zeroes, and setting a size of an information chunk based on the pattern of logic ones and zeroes.
Public/Granted literature
- US20140143484A1 STAGGERED PROGRAMMING FOR RESISTIVE MEMORIES Public/Granted day:2014-05-22
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