Staggered programming for resistive memories
    1.
    发明授权
    Staggered programming for resistive memories 有权
    电阻存储器的交错编程

    公开(公告)号:US09164894B2

    公开(公告)日:2015-10-20

    申请号:US14165265

    申请日:2014-01-27

    Abstract: Subject matter disclosed herein relates to a memory device and method of programming same. In some embodiments, a memory device can be programmed by partitioning information into a plurality of chunks. Partitioning can be performed by determining a pattern of logic ones and zeroes, and setting a size of an information chunk based on the pattern of logic ones and zeroes.

    Abstract translation: 本文公开的主题涉及一种对其进行编程的存储器件及其方法。 在一些实施例中,可以通过将信息划分成多个块来编程存储器设备。 可以通过确定逻辑1和零的模式来执行分区,并且基于逻辑1和零的模式来设置信息块的大小。

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