Invention Grant
- Patent Title: High metal ionization sputter gun
- Patent Title (中): 高金属电离溅射枪
-
Application No.: US13281316Application Date: 2011-10-25
-
Publication No.: US09175382B2Publication Date: 2015-11-03
- Inventor: Hong Sheng Yang , Tony P. Chiang , Kent Riley Child , Chi-I Lang , ShouQian Shao
- Applicant: Hong Sheng Yang , Tony P. Chiang , Kent Riley Child , Chi-I Lang , ShouQian Shao
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01J37/34 ; C23C14/35

Abstract:
In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.
Public/Granted literature
- US20130101750A1 High Metal Ionization Sputter Gun Public/Granted day:2013-04-25
Information query
IPC分类: