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    High metal ionization sputter gun
    1.
    发明授权
    High metal ionization sputter gun 有权
    高金属电离溅射枪

    公开(公告)号：US09175382B2

    公开(公告)日：2015-11-03

    申请号：US13281316

    申请日：2011-10-25

    申请人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

    发明人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

    IPC分类号： C23C14/34 ,  H01J37/34 ,  C23C14/35

    CPC分类号： C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458 ,  H01J37/3467

    摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.

    摘要翻译： 在本发明的一个方面，提供一种处理室。 该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。 多个溅射枪中的每一个耦合到第一电源。 第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。 脉冲电源的占空比小于30％。 包括设置在距离多个溅射枪一定距离的衬底支撑件。 衬底支撑件耦合到第二电源。 第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。 还包括执行沉积工艺的方法。

    High Metal Ionization Sputter Gun
    2.
    发明申请
    High Metal Ionization Sputter Gun 有权
    高金属电离溅射枪

    公开(公告)号：US20130101750A1

    公开(公告)日：2013-04-25

    申请号：US13281316

    申请日：2011-10-25

    申请人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

    发明人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

    IPC分类号： C23C14/34

    CPC分类号： C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458 ,  H01J37/3467

    摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.

    摘要翻译： 在本发明的一个方面，提供一种处理室。 该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。 多个溅射枪中的每一个耦合到第一电源。 第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。 脉冲电源的占空比小于30％。 包括设置在距离多个溅射枪一定距离的衬底支撑件。 衬底支撑件耦合到第二电源。 第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。 还包括执行沉积工艺的方法。

    Combinatorial RF bias method for PVD
    3.
    发明授权
    Combinatorial RF bias method for PVD 有权
    PVD的组合RF偏置方法

    公开(公告)号：US08974649B2

    公开(公告)日：2015-03-10

    申请号：US13316882

    申请日：2011-12-12

    申请人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    发明人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00

    CPC分类号： C23C14/044 ,  C23C14/34 ,  C23C14/505 ,  H01J37/32651 ,  H01J37/34

    摘要： In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

    摘要翻译： 在本发明的一些实施例中，提供了一种屏蔽件，其中屏蔽件包括陶瓷绝缘材料。 陶瓷绝缘材料填充屏蔽件和基板表面之间的空间，并且保持小于约2mm并且有利地小于约1mm的间隙。 屏蔽可以通过低通滤波器进一步连接到地面，该低通滤波器可操作以防止通过屏蔽到地面的高频RF功率的损失，但允许通过低频或DC信号从屏蔽到地面的电荷的耗散。 在一些实施例中，陶瓷绝缘材料还包括可移除的陶瓷插入件。 陶瓷插入件可用于选择孔径的尺寸。 陶瓷插入件还包括可操作以将陶瓷插入件的底部唇缘与上部隔离用于PVD沉积的槽。

    COMBINATORIAL RF BIAS METHOD FOR PVD
    4.
    发明申请
    COMBINATORIAL RF BIAS METHOD FOR PVD 有权
    PVD的组合RF偏置方法

    公开(公告)号：US20130149469A1

    公开(公告)日：2013-06-13

    申请号：US13316882

    申请日：2011-12-12

    申请人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    发明人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    IPC分类号： C23C16/04

    CPC分类号： C23C14/044 ,  C23C14/34 ,  C23C14/505 ,  H01J37/32651 ,  H01J37/34

    摘要： In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

    摘要翻译： 在本发明的一些实施例中，提供了一种屏蔽件，其中屏蔽件包括陶瓷绝缘材料。 陶瓷绝缘材料填充屏蔽件和基板表面之间的空间，并且保持小于约2mm并且有利地小于约1mm的间隙。 屏蔽还可以通过低通滤波器连接到地面，该低通滤波器可操作以防止通过屏蔽到地面的高频RF功率的损失，但允许通过低频或DC信号从屏蔽到地面的电荷的耗散。 在一些实施例中，陶瓷绝缘材料还包括可移除的陶瓷插入件。 陶瓷插入件可用于选择孔径的尺寸。 陶瓷插入件还包括可操作以将陶瓷插入件的底部唇缘与上部隔离用于PVD沉积的槽。

    COMBINATORIAL PROCESSING USING A REMOTE PLASMA SOURCE
    6.
    发明申请
    COMBINATORIAL PROCESSING USING A REMOTE PLASMA SOURCE 审中-公开
    使用远程等离子体源的组合处理

    公开(公告)号：US20130153536A1

    公开(公告)日：2013-06-20

    申请号：US13328129

    申请日：2011-12-16

    申请人： ShouQian Shao ,  Kent Riley Child ,  Danny Wang

    发明人： ShouQian Shao ,  Kent Riley Child ,  Danny Wang

    IPC分类号： B44C1/22 ,  H05H1/24 ,  B08B5/00 ,  C23C16/50

    CPC分类号： C23C16/042 ,  C23C16/452 ,  C23C16/50 ,  H05H1/54

    摘要： Methods and apparatuses for combinatorial processing using a remote plasma source are disclosed. The apparatus includes a remote plasma source and an inner chamber enclosing a substrate support. An aperture is operable to provide plasma exposure to a site-isolated region on a substrate. A transport system moves the substrate support and is capable of positioning the substrate such that the site-isolated region can be located anywhere on the substrate. Barriers and a gas purge system operate to provide site-isolation. Plasma exposure parameters can be varied in a combinatorial manner. Such parameters include source gases for the plasma generator, plasma filtering parameters, exposure time, gas flow rate, frequency, plasma generator power, plasma generation method, chamber pressure, substrate temperature, distance between plasma source and substrate, substrate bias voltage, or combinations thereof.

    摘要翻译： 公开了使用远程等离子体源进行组合处理的方法和装置。 该装置包括远程等离子体源和封闭衬底支撑件的内室。 孔可操作以提供等离子体暴露于衬底上的位置隔离区域。 运输系统移动衬底支撑件并且能够定位衬底，使得位置隔离区域可以位于衬底上的任何地方。 障碍物和气体净化系统用于提供场地隔离。 等离子体曝光参数可以以组合方式变化。 这些参数包括等离子体发生器的源气体，等离子体过滤参数，曝光时间，气体流速，频率，等离子体发生器功率，等离子体产生方法，室压力，衬底温度，等离子体源和衬底之间的距离，衬底偏置电压或组合 其中。

    Combinatorial and Full Substrate Sputter Deposition Tool and Method
    7.
    发明申请
    Combinatorial and Full Substrate Sputter Deposition Tool and Method 审中-公开
    组合和全基板溅射沉积工具和方法

    公开(公告)号：US20120285819A1

    公开(公告)日：2012-11-15

    申请号：US13103951

    申请日：2011-05-09

    申请人： Kent Riley Child ,  Hong Sheng Yang ,  Rajesh Kelekar

    发明人： Kent Riley Child ,  Hong Sheng Yang ,  Rajesh Kelekar

    IPC分类号： C23C14/34

    CPC分类号： C23C14/3464 ,  C23C14/04

    摘要： A dual purpose processing chamber is provided. The dual purpose processing chamber includes a lid disposed over a top surface of a processing region of the processing chamber. A plurality of sputter guns with a target affixed to one end of each of the sputter guns is included. The plurality of sputter guns extend through the lid of the process chamber, wherein each of the plurality of sputter guns is oriented such that a surface of the target affixed to each gun is angled toward an outer periphery of a substrate. In another embodiment, each of the sputter guns is affixed to an extension arm and the extension arm is configured to enable movement in four degrees of freedom. A method of performing a deposition process is also included.

    摘要翻译： 提供了一个双重目的的处理室。 双用途处理室包括设置在处理室的处理区域的顶表面上的盖子。 包括固定在每个溅射枪的一端的目标的多个溅射枪。 多个溅射枪延伸穿过处理室的盖，其中多个溅射枪中的每一个被定向成使得固定到每个喷枪的靶的表面朝向基板的外周边成角度。 在另一个实施例中，每个溅射枪被固定到延伸臂上，并且延伸臂构造成能够以四个自由度运动。 还包括执行沉积工艺的方法。

    Combinatorial Processing Tool
    8.
    发明申请
    Combinatorial Processing Tool 审中-公开
    组合处理工具

    公开(公告)号：US20130153054A1

    公开(公告)日：2013-06-20

    申请号：US13330149

    申请日：2011-12-19

    申请人： Kent Riley Child ,  Tony P. Chiang

    发明人： Kent Riley Child ,  Tony P. Chiang

    IPC分类号： F16L3/00 ,  B25B11/00

    CPC分类号： B25B11/005 ,  H01L21/67103 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785 ,  Y10T137/6851

    摘要： A combinatorial processing chamber is provided. The processing chamber includes a substrate support rotatable around a central axis. The substrate support has a plurality of subsections operable to be isolated from each other. The plurality of subsections has a rotatable support cell independently controllable from the substrate support. A vacuum source in fluid communication with a gap defined around a peripheral region of the substrate support is provided. The vacuum source is in fluid communication with a peripheral region of each rotatable support cell of the plurality of subsections.

    摘要翻译： 提供组合处理室。 处理室包括可围绕中心轴线旋转的基板支撑件。 衬底支撑件具有可操作以彼此隔离的多个子部分。 多个子部分具有可自基板支撑件独立控制的可旋转支撑单元。 提供了与基板支撑件的周边区域周围限定的间隙流体连通的真空源。 真空源与多个子部分中的每个可旋转的支撑单元的周边区域流体连通。

    Substrate Processing Tool with Tunable Fluid Flow
    10.
    发明申请
    Substrate Processing Tool with Tunable Fluid Flow 审中-公开
    具有可调流体流动的基板加工工具

    公开(公告)号：US20130153149A1

    公开(公告)日：2013-06-20

    申请号：US13331011

    申请日：2011-12-20

    申请人： Danny Wang ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    发明人： Danny Wang ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    IPC分类号： C23F1/08 ,  F17D3/00 ,  C23C16/458

    CPC分类号： C23C16/4585 ,  H01L21/6719 ,  H01L21/68735 ,  Y10T137/0318

    摘要： Embodiments provided herein describe substrate processing tools. The substrate processing tools include a housing defining a processing chamber. A substrate support is coupled to the housing and configured to support a substrate within the processing chamber. The substrate has a central axis. A first annular member is moveably coupled to the housing and positioned within the processing chamber. The first annular member circumscribes the central axis of the substrate. A second annular member is moveably coupled to the housing and positioned within the processing chamber. The second annular member circumscribes the central axis of the substrate. Movement of the first annular member and the second annular member relative to the housing changes a flow of processing fluid through the processing chamber.

    摘要翻译： 本文提供的实施例描述了衬底处理工具。 衬底处理工具包括限定处理室的壳体。 衬底支撑件联接到壳体并且构造成支撑处理室内的衬底。 基板具有中心轴。 第一环形构件可移动地联接到壳体并且定位在处理室内。 第一环形构件围绕衬底的中心轴线。 第二环形构件可移动地联接到壳体并且定位在处理室内。 第二环形构件围绕基板的中心轴线。 第一环形构件和第二环形构件相对于壳体的移动改变处理流体通过处理室的流动。