公开(公告)号：US08779407B2

公开(公告)日：2014-07-15

申请号：US13367662

申请日：2012-02-07

申请人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Yun Wang ,  Hong Sheng Yang

发明人： Hieu Pham ,  Vidyut Gopal ,  Imran Hashim ,  Dipankar Pramanik ,  Yun Wang ,  Hong Sheng Yang

IPC分类号： H01L29/02

CPC分类号： C23C14/345 ,  C23C14/0042 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/225 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1608 ,  H01L45/1616 ,  H01L45/1625

摘要： A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed.

公开(公告)号：US20130270104A1

公开(公告)日：2013-10-17

申请号：US13444100

申请日：2012-04-11

申请人： Hong Sheng Yang ,  Chi-l Lang ,  Yun Wang

发明人： Hong Sheng Yang ,  Chi-l Lang ,  Yun Wang

IPC分类号： C23C14/35

CPC分类号： C23C14/042 ,  C23C14/352 ,  C23C14/548

摘要： Embodiments of the present invention provide methods and apparatuses using sputtering from a mosaic sputtering target for depositing layers onto a substrate, and provide the capability of depositing layers onto site isolated regions of the substrate in a combinatorial manner. A sputtering source is provided including a sputtering target comprising a first region having a first composition, and a second region having a second composition. A selection mechanism is capable of selecting a composition of emitted material from the sputtering source that can range from 0% to 100% of the first composition and from 0% to 100% of the second composition. The selection mechanism can comprise a movable magnetron or a moveable aperture.

摘要翻译： 本发明的实施方案提供了使用来自马赛克溅射靶的溅射的方法和装置，用于将层沉积到衬底上，并提供以组合方式将层沉积到衬底的位置隔离区上的能力。 提供溅射源，其包括溅射靶，其包括具有第一组成的第一区域和具有第二组成的第二区域。 选择机构能够从溅射源选择发射材料的组成，该组成可以在第一组分的0％至100％和第二组合物的0％至100％的范围内。 选择机构可以包括可移动磁控管或可移动孔。

公开(公告)号：US20130101749A1

公开(公告)日：2013-04-25

申请号：US13281299

申请日：2011-10-25

申请人： Hong Sheng Yang ,  Chi-I Lang

发明人： Hong Sheng Yang ,  Chi-I Lang

IPC分类号： C23C14/35

CPC分类号： C23C14/351 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458

摘要： In one aspect of the invention, a process chamber is provided. The process chamber includes a plurality of sputter guns with a target and a main magnet affixed to one end of each of the sputter guns. A substrate support is disposed at a distance from the plurality of sputter guns. An auxiliary magnet is disposed near the substrate. The auxiliary magnet surrounds an outer peripheral surface of the substrate support. In alternative embodiments the magnet may be disposed in a plate or holder disposed below or above the substrate support. In additional embodiments, the auxiliary magnet may be embedded within the substrate support. Furthermore, the auxiliary magnet can either be permanent magnets or electromagnets. A method of performing a deposition process is also included.

摘要翻译： 在本发明的一个方面，提供一种处理室。 处理室包括多个具有目标物体的溅射枪和固定在每个溅射枪的一端的主磁体。 衬底支撑件设置在距离多个溅射枪一定距离处。 辅助磁铁设置在基板附近。 辅助磁体围绕基板支撑件的外周表面。 在替代实施例中，磁体可以设置在设置在基板支撑件下方或上方的板或保持器中。 在另外的实施例中，辅助磁体可以嵌入衬底支撑件内。 此外，辅助磁体可以是永磁体或电磁体。 还包括执行沉积工艺的方法。

公开(公告)号：US08906207B2

公开(公告)日：2014-12-09

申请号：US13081042

申请日：2011-04-06

申请人： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

发明人： Hong Sheng Yang ,  Chi-I Lang ,  Tony Chiang

IPC分类号： C23C14/34 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/34 ,  C23C14/54 ,  C23C14/548 ,  H01J37/3447

摘要： The present disclosure includes a method for control of a film composition with co-sputter physical vapor deposition. In one implementation, the method includes: positioning first and second PVD guns above a substrate, selecting first and second collimators having first and second sets of physical characteristics, positioning the first and second collimators between the first and second PVD guns and the substrate, sputtering at least one material from the first and second PVD guns through the first and second collimators upon application of a first power and second power, wherein the first PVD gun has a first deposition rate from the first collimator at the first power, and the second PVD gun has a second deposition rate from the second collimator at the second power.

摘要翻译： 本公开内容包括用于控制具有共溅射物理气相沉积的膜组合物的方法。 在一个实施方案中，该方法包括：将第一和第二PVD枪定位在衬底上方，选择具有第一和第二组物理特性的第一和第二准直器，将第一和第二准直器定位在第一和第二PVD枪和衬底之间，溅射 在施加第一功率和第二功率时，来自第一和第二PVD枪的至少一种材料通过第一和第二准直器，其中第一PVD枪具有来自第一准直器的第一沉积速率，而第二PVD 枪在第二功率下具有来自第二准直器的第二沉积速率。

公开(公告)号：US20130153413A1

公开(公告)日：2013-06-20

申请号：US13327281

申请日：2011-12-15

申请人： Hong Sheng Yang ,  Hien Min Huu Le ,  Xuena Zhang

发明人： Hong Sheng Yang ,  Hien Min Huu Le ,  Xuena Zhang

IPC分类号： C23C14/34 ,  C23C14/35

CPC分类号： C23C14/35 ,  C23C14/042 ,  C23C14/351 ,  C23C14/352 ,  C23C14/505 ,  C23C14/542 ,  C23C14/564 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3447

摘要： In some embodiments of the present invention, a gun shutter is provided that comprises a gun shutter lip that aligns with a grounded shield lip to form a gap. The gap is operable to prevent contamination from other sputter guns present in the chamber. Additionally, the gun shutter is spaced apart from the face of the target so that a stable plasma may be ignited and maintained between the face of the target and the gun shutter. This allows the gun shutter to be used as a burn-in or conditioning shield and allows the elimination of other shields, thus lowering the size, complexity, and cost of the chamber.

摘要翻译： 在本发明的一些实施例中，提供了一个枪闸，其包括与接地屏蔽唇缘对准以形成间隙的喷枪快门唇缘。 间隙可操作以防止存在于腔室中的其它溅射枪的污染。 此外，枪闸与靶的表面间隔开，使得稳定的等离子体可能被点燃并保持在靶的表面与枪闸之间。 这样就可以将枪挡用作老化或调节屏蔽，并允许消除其他屏蔽，从而降低腔室的尺寸，复杂性和成本。

公开(公告)号：US20130153149A1

公开(公告)日：2013-06-20

申请号：US13331011

申请日：2011-12-20

申请人： Danny Wang ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

发明人： Danny Wang ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

IPC分类号： C23F1/08 ,  F17D3/00 ,  C23C16/458

CPC分类号： C23C16/4585 ,  H01L21/6719 ,  H01L21/68735 ,  Y10T137/0318

摘要： Embodiments provided herein describe substrate processing tools. The substrate processing tools include a housing defining a processing chamber. A substrate support is coupled to the housing and configured to support a substrate within the processing chamber. The substrate has a central axis. A first annular member is moveably coupled to the housing and positioned within the processing chamber. The first annular member circumscribes the central axis of the substrate. A second annular member is moveably coupled to the housing and positioned within the processing chamber. The second annular member circumscribes the central axis of the substrate. Movement of the first annular member and the second annular member relative to the housing changes a flow of processing fluid through the processing chamber.

摘要翻译： 本文提供的实施例描述了衬底处理工具。 衬底处理工具包括限定处理室的壳体。 衬底支撑件联接到壳体并且构造成支撑处理室内的衬底。 基板具有中心轴。 第一环形构件可移动地联接到壳体并且定位在处理室内。 第一环形构件围绕衬底的中心轴线。 第二环形构件可移动地联接到壳体并且定位在处理室内。 第二环形构件围绕基板的中心轴线。 第一环形构件和第二环形构件相对于壳体的移动改变处理流体通过处理室的流动。

公开(公告)号：US20130149469A1

公开(公告)日：2013-06-13

申请号：US13316882

申请日：2011-12-12

申请人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

发明人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

IPC分类号： C23C16/04

CPC分类号： C23C14/044 ,  C23C14/34 ,  C23C14/505 ,  H01J37/32651 ,  H01J37/34

摘要： In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

摘要翻译： 在本发明的一些实施例中，提供了一种屏蔽件，其中屏蔽件包括陶瓷绝缘材料。 陶瓷绝缘材料填充屏蔽件和基板表面之间的空间，并且保持小于约2mm并且有利地小于约1mm的间隙。 屏蔽还可以通过低通滤波器连接到地面，该低通滤波器可操作以防止通过屏蔽到地面的高频RF功率的损失，但允许通过低频或DC信号从屏蔽到地面的电荷的耗散。 在一些实施例中，陶瓷绝缘材料还包括可移除的陶瓷插入件。 陶瓷插入件可用于选择孔径的尺寸。 陶瓷插入件还包括可操作以将陶瓷插入件的底部唇缘与上部隔离用于PVD沉积的槽。

公开(公告)号：US20130017316A1

公开(公告)日：2013-01-17

申请号：US13184291

申请日：2011-07-15

申请人： Hong Sheng Yang ,  Kent Riley Child

发明人： Hong Sheng Yang ,  Kent Riley Child

IPC分类号： C23C14/54 ,  C23C14/35

CPC分类号： C23C14/3407 ,  H01J37/3405 ,  H01J37/3435 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3479 ,  H01J37/3497

摘要： A sputter gun is provided in the embodiments contained herein. The sputter gun includes an impeller disposed within a backside portion of an opening within a housing of the sputter gun, the housing including an inlet directing fluid to rotate the impeller around an axis. A plate is disposed next to the impeller, the plate has openings extending therethrough, the openings enabling the fluid access to a backside portion of the opening within the housing. A plurality of magnets is disposed within the front side of the plate and extending from a surface of the plate such that as the impeller rotates with the plurality of magnets. A thermally conductive membrane extends across a front surface of the front portion of the opening, wherein the fluid contacts the thermally conductive membrane prior to exiting the opening within the housing. A method of performing a deposition process is also included.

摘要翻译： 在本文包含的实施例中提供溅射枪。 溅射枪包括设置在溅射枪的壳体内的开口的后侧部分内的叶轮，壳体包括引导流体以围绕轴线旋转叶轮的入口。 板靠近叶轮设置，板具有穿过其中的开口，所述开口使得流体能够进入壳体内的开口的后侧部分。 多个磁体设置在板的前侧内并且从板的表面延伸，使得随着叶轮与多个磁体一起旋转。 导热膜延伸穿过开口的前部的前表面，其中流体在离开壳体内的开口之前接触导热膜。 还包括执行沉积工艺的方法。

公开(公告)号：US08920618B2

公开(公告)日：2014-12-30

申请号：US13339648

申请日：2011-12-29

申请人： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

发明人： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

IPC分类号： C23C14/54

CPC分类号： C23C14/044 ,  C23C14/3464

摘要： Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.

摘要翻译： 公开了用于将沉积层沉积到基底上的高沉积速率溅射的装置和方法。 设备通常包括处理室; 设置在处理室内的一个或多个溅射源，其中每个溅射源包括溅射靶; 设置在所述处理室内的衬底支撑件; 位于所述溅射源和所述衬底之间的屏蔽罩，所述屏蔽件包括位于每个溅射源下方的孔; 以及连接到所述基板支撑件的输送系统，其能够定位所述基板，使得所述基板上的多个位置隔离区域中的一个可以通过位于每个所述溅射源下方的所述孔暴露于溅射材料; 其中溅射靶和衬底之间的间距小于100mm。 该装置能够在衬底上的位置分离区域上实现高沉积速率溅射。

公开(公告)号：US20130167773A1

公开(公告)日：2013-07-04

申请号：US13339648

申请日：2011-12-29

申请人： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

发明人： Hong Sheng Yang ,  Zhendong Hong ,  Chi-I Lang

IPC分类号： C23C14/34

CPC分类号： C23C14/044 ,  C23C14/3464

摘要： Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.

摘要翻译： 公开了用于将沉积层沉积到基底上的高沉积速率溅射的装置和方法。 设备通常包括处理室; 设置在处理室内的一个或多个溅射源，其中每个溅射源包括溅射靶; 设置在所述处理室内的衬底支撑件; 位于所述溅射源和所述衬底之间的屏蔽罩，所述屏蔽件包括位于每个溅射源下方的孔; 以及连接到所述基板支撑件的输送系统，其能够定位所述基板，使得所述基板上的多个位置隔离区域中的一个可以通过位于每个所述溅射源下方的所述孔暴露于溅射材料; 其中溅射靶和衬底之间的间距小于100mm。 该装置能够在衬底上的位置分离区域上实现高沉积速率溅射。