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    High metal ionization sputter gun
    1.
    发明授权
    High metal ionization sputter gun 有权
    高金属电离溅射枪

    公开(公告)号：US09175382B2

    公开(公告)日：2015-11-03

    申请号：US13281316

    申请日：2011-10-25

    申请人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

    发明人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

    IPC分类号： C23C14/34 ,  H01J37/34 ,  C23C14/35

    CPC分类号： C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458 ,  H01J37/3467

    摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.

    摘要翻译： 在本发明的一个方面，提供一种处理室。 该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。 多个溅射枪中的每一个耦合到第一电源。 第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。 脉冲电源的占空比小于30％。 包括设置在距离多个溅射枪一定距离的衬底支撑件。 衬底支撑件耦合到第二电源。 第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。 还包括执行沉积工艺的方法。

    High Metal Ionization Sputter Gun
    2.
    发明申请
    High Metal Ionization Sputter Gun 有权
    高金属电离溅射枪

    公开(公告)号：US20130101750A1

    公开(公告)日：2013-04-25

    申请号：US13281316

    申请日：2011-10-25

    申请人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

    发明人： Hong Sheng Yang ,  Tony P. Chiang ,  Kent Riley Child ,  Chi-I Lang ,  ShouQian Shao

    IPC分类号： C23C14/34

    CPC分类号： C23C14/345 ,  C23C14/3485 ,  C23C14/352 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/3458 ,  H01J37/3467

    摘要： In one aspect of the invention, a process chamber is provided. The chamber includes a plurality of sputter guns with a target affixed to one end of each of the sputter guns. Each of the plurality of sputter guns is coupled to a first power source. The first power source is operable to provide a pulsed power supply to each of the plurality of sputter guns. The pulsed power supply has a duty cycle that is less than 30%. A substrate support disposed at a distance from the plurality of sputter guns is included. The substrate support is coupled to a second power source. The second power source is operable to bias a substrate disposed on the substrate support, wherein the duty cycle of the second power source is synchronized with a duty cycle of the first power source. A method of performing a deposition process is also included.

    摘要翻译： 在本发明的一个方面，提供一种处理室。 该腔室包括多个溅射枪，其中目标物固定在每个溅射枪的一端。 多个溅射枪中的每一个耦合到第一电源。 第一电源可操作以向多个溅射枪中的每一个提供脉冲电源。 脉冲电源的占空比小于30％。 包括设置在距离多个溅射枪一定距离的衬底支撑件。 衬底支撑件耦合到第二电源。 第二电源可操作以偏置设置在衬底支撑件上的衬底，其中第二电源的占空比与第一电源的占空比同步。 还包括执行沉积工艺的方法。

    COMBINATORIAL RF BIAS METHOD FOR PVD
    3.
    发明申请
    COMBINATORIAL RF BIAS METHOD FOR PVD 有权
    PVD的组合RF偏置方法

    公开(公告)号：US20130149469A1

    公开(公告)日：2013-06-13

    申请号：US13316882

    申请日：2011-12-12

    申请人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    发明人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    IPC分类号： C23C16/04

    CPC分类号： C23C14/044 ,  C23C14/34 ,  C23C14/505 ,  H01J37/32651 ,  H01J37/34

    摘要： In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

    摘要翻译： 在本发明的一些实施例中，提供了一种屏蔽件，其中屏蔽件包括陶瓷绝缘材料。 陶瓷绝缘材料填充屏蔽件和基板表面之间的空间，并且保持小于约2mm并且有利地小于约1mm的间隙。 屏蔽还可以通过低通滤波器连接到地面，该低通滤波器可操作以防止通过屏蔽到地面的高频RF功率的损失，但允许通过低频或DC信号从屏蔽到地面的电荷的耗散。 在一些实施例中，陶瓷绝缘材料还包括可移除的陶瓷插入件。 陶瓷插入件可用于选择孔径的尺寸。 陶瓷插入件还包括可操作以将陶瓷插入件的底部唇缘与上部隔离用于PVD沉积的槽。

    Combinatorial RF bias method for PVD
    4.
    发明授权
    Combinatorial RF bias method for PVD 有权
    PVD的组合RF偏置方法

    公开(公告)号：US08974649B2

    公开(公告)日：2015-03-10

    申请号：US13316882

    申请日：2011-12-12

    申请人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    发明人： ShouQian Shao ,  Kent Riley Child ,  James Tsung ,  Hong Sheng Yang

    IPC分类号： C23C14/00 ,  C25B11/00 ,  C25B13/00

    CPC分类号： C23C14/044 ,  C23C14/34 ,  C23C14/505 ,  H01J37/32651 ,  H01J37/34

    摘要： In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.

    摘要翻译： 在本发明的一些实施例中，提供了一种屏蔽件，其中屏蔽件包括陶瓷绝缘材料。 陶瓷绝缘材料填充屏蔽件和基板表面之间的空间，并且保持小于约2mm并且有利地小于约1mm的间隙。 屏蔽可以通过低通滤波器进一步连接到地面，该低通滤波器可操作以防止通过屏蔽到地面的高频RF功率的损失，但允许通过低频或DC信号从屏蔽到地面的电荷的耗散。 在一些实施例中，陶瓷绝缘材料还包括可移除的陶瓷插入件。 陶瓷插入件可用于选择孔径的尺寸。 陶瓷插入件还包括可操作以将陶瓷插入件的底部唇缘与上部隔离用于PVD沉积的槽。

    COMBINATORIAL PROCESSING USING A REMOTE PLASMA SOURCE
    6.
    发明申请
    COMBINATORIAL PROCESSING USING A REMOTE PLASMA SOURCE 审中-公开
    使用远程等离子体源的组合处理

    公开(公告)号：US20130153536A1

    公开(公告)日：2013-06-20

    申请号：US13328129

    申请日：2011-12-16

    申请人： ShouQian Shao ,  Kent Riley Child ,  Danny Wang

    发明人： ShouQian Shao ,  Kent Riley Child ,  Danny Wang

    IPC分类号： B44C1/22 ,  H05H1/24 ,  B08B5/00 ,  C23C16/50

    CPC分类号： C23C16/042 ,  C23C16/452 ,  C23C16/50 ,  H05H1/54

    摘要： Methods and apparatuses for combinatorial processing using a remote plasma source are disclosed. The apparatus includes a remote plasma source and an inner chamber enclosing a substrate support. An aperture is operable to provide plasma exposure to a site-isolated region on a substrate. A transport system moves the substrate support and is capable of positioning the substrate such that the site-isolated region can be located anywhere on the substrate. Barriers and a gas purge system operate to provide site-isolation. Plasma exposure parameters can be varied in a combinatorial manner. Such parameters include source gases for the plasma generator, plasma filtering parameters, exposure time, gas flow rate, frequency, plasma generator power, plasma generation method, chamber pressure, substrate temperature, distance between plasma source and substrate, substrate bias voltage, or combinations thereof.

    摘要翻译： 公开了使用远程等离子体源进行组合处理的方法和装置。 该装置包括远程等离子体源和封闭衬底支撑件的内室。 孔可操作以提供等离子体暴露于衬底上的位置隔离区域。 运输系统移动衬底支撑件并且能够定位衬底，使得位置隔离区域可以位于衬底上的任何地方。 障碍物和气体净化系统用于提供场地隔离。 等离子体曝光参数可以以组合方式变化。 这些参数包括等离子体发生器的源气体，等离子体过滤参数，曝光时间，气体流速，频率，等离子体发生器功率，等离子体产生方法，室压力，衬底温度，等离子体源和衬底之间的距离，衬底偏置电压或组合 其中。

    Method Of Enabling And Controlling Ozone Concentration And Flow
    8.
    发明申请
    Method Of Enabling And Controlling Ozone Concentration And Flow 审中-公开
    启动和控制臭氧浓度和流量的方法

    公开(公告)号：US20130270103A1

    公开(公告)日：2013-10-17

    申请号：US13339734

    申请日：2012-04-17

    申请人： ShouQian Shao ,  Vincent Li ,  Jason R. Wright

    发明人： ShouQian Shao ,  Vincent Li ,  Jason R. Wright

    IPC分类号： C01B13/11 ,  B01J7/00

    CPC分类号： C01B13/11 ,  B01J4/008

    摘要： Systems and methods to delivery various ozone concentration and various flow rates are disclosed. A low flow, low concentration ozone delivery apparatus comprises an ozone generator configured to deliver a predetermined high flow, low concentration ozone output, an orifice having a predetermined size coupled to the high flow, low concentration ozone output configured to remove a particular amount of the high flow, low concentration ozone, and a mass flow controller coupled to the ozone generator and the orifice, the mass flow controller configured to monitor and control the flow of ozone based on the particular amount bled from the high flow, low concentration ozone to provide a low flow, low concentration ozone.

    摘要翻译： 公开了递送各种臭氧浓度和各种流速的系统和方法。 低流量低浓度臭氧输送装置包括臭氧发生器，其被配置为输送预定的高流量，低浓度臭氧输出，具有预定尺寸的孔口，该孔口与高流量，低浓度臭氧输出相结合，以便去除特定量的 高流量，低浓度臭氧和耦合到臭氧发生器和孔口的质量流量控制器，质量流量控制器被配置为基于从高流量，低浓度臭氧引起的特定量来监测和控制臭氧流，以提供 低流量，低浓度臭氧。

    Particle trap for a plasma source
    9.
    发明授权
    Particle trap for a plasma source 失效
    用于等离子体源的粒子阱

    公开(公告)号：US07914603B2

    公开(公告)日：2011-03-29

    申请号：US12147078

    申请日：2008-06-26

    申请人： Ali Shajii ,  Xing Chen ,  Andrew Cowe ,  David Burtner ,  William Robert Entley ,  ShouQian Shao

    发明人： Ali Shajii ,  Xing Chen ,  Andrew Cowe ,  David Burtner ,  William Robert Entley ,  ShouQian Shao

    IPC分类号： B01D46/46

    CPC分类号： H01J37/32357 ,  H01J37/32871 ,  Y10S55/15 ,  Y10T29/4935

    摘要： A particle trap for a remote plasma source includes a body structure having an inlet for coupling to a chamber of a remote plasma source and an outlet for coupling to a process chamber inlet. The particle trap for a remote plasma source also includes a gas channel formed in the body structure and in fluid communication with the body structure inlet and the body structure outlet. The gas channel can define a path through the body structure that causes particles in a gas passing from a first portion of the channel to strike a wall that defines a second portion of the gas channel at an angle relative to a surface of the wall. A coolant member can be in thermal communication with the gas channel.

    摘要翻译： 用于远程等离子体源的颗粒捕集器包括具有用于耦合到远程等离子体源的室的入口和用于耦合到处理室入口的出口的主体结构。 用于远程等离子体源的颗粒捕获器还包括形成在主体结构中并与主体结构入口和主体结构出口流体连通的气体通道。 气体通道可以限定穿过主体结构的路径，其使得从通道的第一部分通过的气体中的颗粒撞击限定气体通道的第二部分的壁，该壁相对于壁的表面成一定角度。 冷却剂构件可以与气体通道热连通。