Invention Grant
- Patent Title: Power semiconductor device capable of maintaining a withstand voltage
- Patent Title (中): 能够保持耐压的功率半导体器件
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Application No.: US13795858Application Date: 2013-03-12
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Publication No.: US09184247B2Publication Date: 2015-11-10
- Inventor: In Hyuk Song , Kee Ju Um , Chang Su Jang , Jae Hoon Park , Dong Soo Seo
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-Do
- Agency: Ladas & Parry, LLP
- Priority: KR10-2012-0134700 20121126
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L29/739 ; H01L29/40 ; H01L29/417 ; H01L29/66 ; H01L29/06
Abstract:
Disclosed herein is a power semiconductor device. The power semiconductor device includes a second conductive type first junction termination extension (JTE) layer that is formed so as to be in contact with one side of the second conductive type well layer, a second conductive type second JTE layer that is formed on the same line as the second conductive type first JTE layer, and is formed so as to be spaced apart from the second conductive type first JTE layer in a length direction of the substrate, and a poly silicon layer that is formed so as to be in contact with the second conductive type well layer and an upper portion of the second conductive type first JTE layer.
Public/Granted literature
- US20140145291A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2014-05-29
Information query
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