Invention Grant
- Patent Title: Semiconductor structure with different fins of FinFETs
- Patent Title (中): 具有FinFET翅片不同的半导体结构
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Application No.: US14340267Application Date: 2014-07-24
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Publication No.: US09184292B2Publication Date: 2015-11-10
- Inventor: Chin-Fu Lin , Chin-Cheng Chien , Chun-Yuan Wu , Teng-Chun Tsai , Chih-Chien Liu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/76 ; H01L29/78 ; H01L21/8234 ; H01L27/108 ; H01L29/66 ; H01L21/764 ; H01L29/165 ; H01L21/311 ; H01L29/10 ; H01L29/16 ; H01L29/161 ; H01L21/02 ; H01L21/3115 ; H01L21/314 ; H01L21/318 ; H01L27/088
Abstract:
A semiconductor structure for forming FinFETs is described. The semiconductor structure includes a semiconductor substrate, a plurality of odd fins of the FinFETs on the substrate, and a plurality of even fins of the FinFETs on the substrate between the odd fins of the FinFETs. The odd fins of the FinFETs are defined from the substrate. The even fins of the FinFETs are different from the odd fins of the FinFETs in at least one of the width and the material, and may be further different from the odd fins of the FinFETs in the height.
Public/Granted literature
- US20140332824A1 SEMICONDUCTOR STRUCTURE WITH DIFFERENT FINS OF FINFETS Public/Granted day:2014-11-13
Information query
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