发明授权
- 专利标题： Chemical vapor deposition method
- 专利标题（中）： 化学气相沉积法
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申请号： US12730088申请日： 2010-03-23
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公开(公告)号： US09212420B2公开(公告)日： 2015-12-15
- 发明人: Eric M. Lee , Raymond Nicholas Vrtis , Mark Leonard O'Neill , Patrick Timothy Hurley , Jacques Faguet , Takashi Matsumoto , Osayuki Akiyama
- 申请人： Eric M. Lee , Raymond Nicholas Vrtis , Mark Leonard O'Neill , Patrick Timothy Hurley , Jacques Faguet , Takashi Matsumoto , Osayuki Akiyama
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23C16/30 ; C23C16/40 ; C23C16/455 ; C23C16/46 ; C23C16/18 ; C23C16/56
摘要：
A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate.
公开/授权文献
- US20100247803A1 Chemical vapor deposition method 公开/授权日：2010-09-30
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