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    Method for chemical vapor deposition control
    3.
    发明授权
    Method for chemical vapor deposition control 有权
    化学气相沉积控制方法

    公开(公告)号：US09139910B2

    公开(公告)日：2015-09-22

    申请号：US12814301

    申请日：2010-06-11

    申请人： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

    发明人： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

    IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46

    CPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/463

    摘要： A method of depositing a thin film on a substrate in a deposition system is described. The method includes disposing a gas heating device comprising a plurality of heating element zones in a deposition system, and independently controlling a temperature of each of the plurality of heating element zones, wherein each of the plurality of heating element zones having one or more resistive heating elements. Additionally, the method includes providing a substrate on a substrate holder in the deposition system, wherein the substrate holder has one or more temperature control zones. The method further includes providing a film forming composition to the gas heating device coupled to the deposition system, pyrolyzing one or more constituents of the film forming composition using the gas heating device, and introducing the film forming composition to the substrate in the deposition system to deposit a thin film on the substrate.

    摘要翻译： 描述了在沉积系统中在衬底上沉积薄膜的方法。 该方法包括在沉积系统中设置包括多个加热元件区域的气体加热装置，并且独立地控制多个加热元件区域中的每一个的温度，其中多个加热元件区域中的每一个具有一个或多个电阻加热 元素。 另外，该方法包括在沉积系统中的衬底保持器上设置衬底，其中衬底保持器具有一个或多个温度控制区。 该方法还包括向耦合到沉积系统的气体加热装置提供成膜组合物，使用气体加热装置热解成膜组合物的一种或多种组分，并将成膜组合物引入到沉积系统中的基底上 在基板上沉积薄膜。

    VAPOR DEPOSITION SYSTEM
    4.
    发明申请
    VAPOR DEPOSITION SYSTEM 有权
    蒸气沉积系统

    公开(公告)号：US20110126762A1

    公开(公告)日：2011-06-02

    申请号：US13025133

    申请日：2011-02-10

    申请人： Jacques Faguet ,  Eric M. Lee

    发明人： Jacques Faguet ,  Eric M. Lee

    IPC分类号： C23C16/503 ,  C23C16/50

    CPC分类号： C23C16/452 ,  B05D1/60 ,  C23C16/44 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/487 ,  C23C16/50

    摘要： A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone. The deposition system further includes a remote source coupled to the process chamber and configured to supply a reactive composition to the process chamber to chemically interact with the substrate, wherein the remote source comprises a remote plasma generator, a remote radical generator, a remote ozone generator, or a water vapor generator, or a combination of two or more thereof.

    摘要翻译： 描述了使用气相沉积工艺在衬底上沉积薄膜的系统。 沉积系统包括具有真空泵送系统的处理室，该真空泵送系统被构造成抽空处理室;衬底保持器，其耦合到处理室并且被配置为支撑衬底;气体分配系统，其耦合到处理室并被配置成引入成膜 组合物到基板表面附近的处理空间，与基板保持器分离的非电离热源，其构造成接收成膜组合物的流动并引起一个或多个成分的热分解 加热时的成膜组合物，以及耦合到加热元件阵列并被配置为向至少一个加热元件区域提供电信号的一个或多个电源。 沉积系统还包括耦合到处理室并被配置为将反应性组合物供应到处理室以与衬底化学相互作用的远程源，其中远程源包括远程等离子体发生器，远程自发发生器，远程臭氧发生器 ，或水蒸汽发生器，或其两个或更多个的组合。

    Vapor deposition system
    6.
    发明授权
    Vapor deposition system 有权
    气相沉积系统

    公开(公告)号：US09157152B2

    公开(公告)日：2015-10-13

    申请号：US13025133

    申请日：2011-02-10

    申请人： Jacques Faguet ,  Eric M. Lee

    发明人： Jacques Faguet ,  Eric M. Lee

    IPC分类号： C23C16/452 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C23C16/50

    CPC分类号： C23C16/452 ,  B05D1/60 ,  C23C16/44 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/487 ,  C23C16/50

    摘要： A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone. The deposition system further includes a remote source coupled to the process chamber and configured to supply a reactive composition to the process chamber to chemically interact with the substrate, wherein the remote source comprises a remote plasma generator, a remote radical generator, a remote ozone generator, or a water vapor generator, or a combination of two or more thereof.

    摘要翻译： 描述了使用气相沉积工艺在衬底上沉积薄膜的系统。 沉积系统包括具有真空泵送系统的处理室，该真空泵送系统被构造成抽空处理室;衬底保持器，其耦合到处理室并且被配置为支撑衬底;气体分配系统，其耦合到处理室并被配置成引入成膜 组合物到基板表面附近的处理空间，与基板保持器分离的非电离热源，其构造成接收成膜组合物的流动并引起一个或多个成分的热分解 加热时的成膜组合物，以及耦合到加热元件阵列并被配置为向至少一个加热元件区域提供电信号的一个或多个电源。 沉积系统还包括耦合到处理室并被配置为将反应性组合物供应到处理室以与衬底化学相互作用的远程源，其中远程源包括远程等离子体发生器，远程自发发生器，远程臭氧发生器 ，或水蒸汽发生器，或其两个或更多个的组合。

    Method and device for controlling pattern and structure formation by an electric field
    7.
    发明授权
    Method and device for controlling pattern and structure formation by an electric field 有权
    用于通过电场控制图案和结构形成的方法和装置

    公开(公告)号：US08916055B2

    公开(公告)日：2014-12-23

    申请号：US13823690

    申请日：2012-07-31

    申请人： Jozef Brcka ,  Jacques Faguet ,  Eric M. Lee ,  Hongyu Yue

    发明人： Jozef Brcka ,  Jacques Faguet ,  Eric M. Lee ,  Hongyu Yue

    IPC分类号： G01R31/00 ,  H01L21/326 ,  H01L21/67 ,  B03C5/00 ,  H01J37/32 ,  C12M3/00 ,  C12M1/26 ,  B03C5/02 ,  A61F2/00 ,  H01L21/02

    CPC分类号： C23C16/50 ,  A61F2/00 ,  B03C5/005 ,  B03C5/026 ,  C12M3/00 ,  C12M21/08 ,  C12M33/00 ,  C23C16/04 ,  C23C16/48 ,  H01J37/32009 ,  H01J37/32697 ,  H01L21/02612 ,  H01L21/67011

    摘要： A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

    摘要翻译： 处理方法和装置使用至少一个电场施加器（34），其被偏置以产生空间 - 时间电场，以影响处理介质（26），悬浮的纳米物体（28）或基板（30）在处理中相互作用 其中介质（26）或颗粒的偶极子性质在衬底（30）上构造结构。 该装置可以包括磁场，声场，光学力或其他生成装置。 处理可能影响基底（30）上的选择性局部层，或者可以控制层中的颗粒的取向，控制介电电泳颗粒或介质的移动，或引起不同性质的悬浮颗粒遵循处理介质（26）中的不同路径。 可以进行在基板（30）上沉积或修饰层。 此外，可以选择处理介质（26）和电偏压以在衬底（30）上制备用于将衬底（30）结合到第二衬底的至少一个层，或者以受控的方向沉积碳纳米管（CNT） 在基板上。

    Apparatus for chemical vapor deposition control
    8.
    发明授权
    Apparatus for chemical vapor deposition control 有权
    化学气相沉积控制装置

    公开(公告)号：US08852347B2

    公开(公告)日：2014-10-07

    申请号：US12814278

    申请日：2010-06-11

    申请人： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

    发明人： Eric M. Lee ,  Jacques Faguet ,  Eric J. Strang

    IPC分类号： C23C16/00 ,  C23C16/52 ,  C23C16/44 ,  H05B3/00 ,  C23C16/455 ,  C23F1/00

    CPC分类号： H05B3/00 ,  C23C16/4405 ,  C23C16/4557 ,  C23C16/52 ,  H05B2203/014 ,  H05B2203/022

    摘要： A gas heating device and a processing system for use therein are described for depositing a thin film on a substrate using a vapor deposition process. The gas heating device includes a heating element array having a plurality of heating element zones configured to receive a flow of a film forming composition across or through said plurality of heating element zones in order to cause pyrolysis of one or more constituents of the film forming composition when heated. Additionally, the processing system may include a substrate holder configured to support a substrate. The substrate holder may include a backside gas supply system configured to supply a heat transfer gas to a backside of said substrate, wherein the backside gas supply system is configured to independently supply the heat transfer gas to multiple zones at the backside of the substrate.

    摘要翻译： 本发明描述了一种用于其中的气体加热装置和处理系统，用于使用气相沉积工艺在基片上沉积薄膜。 气体加热装置包括加热元件阵列，该加热元件阵列具有多个加热元件区域，该多个加热元件区域被配置为在多个加热元件区域中或通过所述多个加热元件区域接收成膜组合物的流动，以便导致成膜组合物的一种或多种成分的热解 加热时。 另外，处理系统可以包括被配置为支撑衬底的衬底保持器。 衬底保持器可以包括后侧气体供应系统，其构造成将热传递气体供应到所述衬底的背面，其中所述背侧气体供应系统被配置为独立地将所述传热气体供应到所述衬底的背侧的多个区域。