Invention Grant
- Patent Title: Thin body switch transistor
- Patent Title (中): 薄体开关晶体管
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Application No.: US13929256Application Date: 2013-06-27
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Publication No.: US09214561B2Publication Date: 2015-12-15
- Inventor: Michel J. Abou-Khalil , Alan B. Botula , Mark D. Jaffe , Alvin J. Joseph , James A. Slinkman
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Robert Mlotkowski Safran & Cole, P.C.
- Agent Michael J. LeStrange; Andrew M. Calderon
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/3205 ; H01L21/4763 ; H01L29/786 ; H01L21/28 ; H01L21/84 ; H01L29/66
Abstract:
An integrated recessed thin body field effect transistor (FET) and methods of manufacture are disclosed. The method includes recessing a portion of a semiconductor material. The method further includes forming at least one gate structure within the recessed portion of the semiconductor material.
Public/Granted literature
- US20150001622A1 THIN BODY SWITCH TRANSISTOR Public/Granted day:2015-01-01
Information query
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