Invention Grant
- Patent Title: Non-volatile semiconductor memory data reading method thereof
- Patent Title (中): 非易失性半导体存储器数据读取方法
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Application No.: US14039341Application Date: 2013-09-27
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Publication No.: US09218888B2Publication Date: 2015-12-22
- Inventor: Kazuki Yamauchi , Katsutoshi Suito , Oron Michael , Jongjun Kim , Youn-Cherl Shin
- Applicant: Winbond Electronics Corp.
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: JP2012-226159 20121011
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/26 ; G11C16/04 ; G11C7/06
Abstract:
A non-volatile semiconductor memory includes a memory array, a selecting device selecting a page according to addresses, a data storage device, storing page data, and an output device outputting the stored data. The data storage device includes a first data storage device receiving data from a selected page of the memory array, a second data storage device receiving data from the first data storage device, and a data transmission device configured between the first and the second data storage device. The data transmission device transmits data in a second part of the first data storage device to the second data storage device when data in a first part of the second data storage device is output, and transmits data in a first part of the first data storage device to the second data storage device when data in a second part of the second data storage device is output.
Public/Granted literature
- US20140104947A1 NON-VOLATILE SEMICONDUCTOR MEMORY DATA READING METHOD THEREOF Public/Granted day:2014-04-17
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