Invention Grant
- Patent Title: Method for manufacturing semiconductor device and device manufactured using the same
- Patent Title (中): 制造半导体器件的方法和使用其制造的器件
-
Application No.: US14279602Application Date: 2014-05-16
-
Publication No.: US09230912B2Publication Date: 2016-01-05
- Inventor: Hsin-Kuo Hsu , Li-Chieh Hsu , Hsiang-Hao Chen , Chung-Wei Hsueh
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WAPT, PC
- Agent Justin King
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L23/528 ; H01L23/532 ; H01L21/768 ; H01L21/3213 ; H01L21/321
Abstract:
A method for manufacturing a semiconductor device and a device manufactured using the same are provided. According to the embodiment, substrate with a dielectric layer formed thereon is provided. Plural trenches are defined in the dielectric layer, and the trenches are isolated by the dielectric layer. A first barrier layer is formed in the trenches as barrier liners of the trenches, followed by filling the trenches with a conductor. Then, the conductor in the trenches is partially removed to form a plurality of recesses, wherein remained conductor has a flat surface. Next, a second barrier layer is formed in the recesses as barrier caps of the trenches.
Public/Granted literature
- US20150333000A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DEVICE MANUFACTURED USING THE SAME Public/Granted day:2015-11-19
Information query
IPC分类:
