公开(公告)号：US09230912B2

公开(公告)日：2016-01-05

申请号：US14279602

申请日：2014-05-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsin-Kuo Hsu ,  Li-Chieh Hsu ,  Hsiang-Hao Chen ,  Chung-Wei Hsueh

IPC: H01L21/311 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/321

CPC classification number: H01L23/528 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device and a device manufactured using the same are provided. According to the embodiment, substrate with a dielectric layer formed thereon is provided. Plural trenches are defined in the dielectric layer, and the trenches are isolated by the dielectric layer. A first barrier layer is formed in the trenches as barrier liners of the trenches, followed by filling the trenches with a conductor. Then, the conductor in the trenches is partially removed to form a plurality of recesses, wherein remained conductor has a flat surface. Next, a second barrier layer is formed in the recesses as barrier caps of the trenches.

Abstract translation: 提供一种制造半导体器件的方法和使用其制造的器件。 根据本实施例，提供了形成有电介质层的基板。 在电介质层中限定多个沟槽，并且通过电介质层隔离沟槽。 在沟槽中形成第一阻挡层作为沟槽的阻挡层，然后用导体填充沟槽。 然后，沟槽中的导体被部分地去除以形成多个凹槽，其中保留的导体具有平坦的表面。 接下来，在凹槽中形成第二阻挡层作为沟槽的阻挡盖。

公开(公告)号：US20150333000A1

公开(公告)日：2015-11-19

申请号：US14279602

申请日：2014-05-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hsin-Kuo Hsu ,  Li-Chieh Hsu ,  Hsiang-Hao Chen ,  Chung-Wei Hsueh

IPC: H01L23/528 ,  H01L21/321 ,  H01L21/3213 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for manufacturing a semiconductor device and a device manufactured using the same are provided. According to the embodiment, substrate with a dielectric layer formed thereon is provided. Plural trenches are defined in the dielectric layer, and the trenches are isolated by the dielectric layer. A first barrier layer is formed in the trenches as barrier liners of the trenches, followed by filling the trenches with a conductor. Then, the conductor in the trenches is partially removed to form a plurality of recesses, wherein remained conductor has a flat surface. Next, a second barrier layer is formed in the recesses as barrier caps of the trenches.

Abstract translation: 提供一种制造半导体器件的方法和使用其制造的器件。 根据本实施例，提供了形成有电介质层的基板。 在电介质层中限定多个沟槽，并且通过电介质层隔离沟槽。 在沟槽中形成第一阻挡层作为沟槽的阻挡层，然后用导体填充沟槽。 然后，沟槽中的导体被部分地去除以形成多个凹槽，其中保留的导体具有平坦的表面。 接下来，在凹槽中形成第二阻挡层作为沟槽的阻挡盖。