Invention Grant
- Patent Title: Molecular beam enhanced GCIB treatment
- Patent Title (中): 分子束增强GCIB处理
-
Application No.: US14550417Application Date: 2014-11-21
-
Publication No.: US09236221B2Publication Date: 2016-01-12
- Inventor: Matthew C. Gwinn
- Applicant: TEL Epion Inc.
- Applicant Address: US MA Billerica
- Assignee: TEL Epion Inc.
- Current Assignee: TEL Epion Inc.
- Current Assignee Address: US MA Billerica
- Agency: Wood, Herron & Evans, LLP
- Main IPC: H01J37/31
- IPC: H01J37/31 ; H01J49/04 ; H01J37/30 ; H01J37/08
Abstract:
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes using one or more molecular beams to optimize pressure at localized regions of the ion beam.
Public/Granted literature
- US20150144786A1 MOLECULAR BEAM ENHANCED GCIB TREATMENT Public/Granted day:2015-05-28
Information query
