Invention Grant
US09236258B2 Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
有权
使用替代栅极技术形成用于半导体器件的栅极结构的方法和所得到的器件
- Patent Title: Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
- Patent Title (中): 使用替代栅极技术形成用于半导体器件的栅极结构的方法和所得到的器件
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Application No.: US14259694Application Date: 2014-04-23
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Publication No.: US09236258B2Publication Date: 2016-01-12
- Inventor: Ruilong Xie , Xiuyu Cai , Andy C. Wei , Qi Zhang , Ajey Poovannummoottil Jacob , Michael Hargrove
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/28 ; H01L29/51
Abstract:
One method disclosed herein includes forming a sacrificial gate structure comprised of upper and lower sacrificial gate electrodes, performing at least one etching process to define a patterned upper sacrificial gate electrode comprised of a plurality of trenches that expose a portion of a surface of the lower sacrificial gate electrode and performing another etching process through the patterned upper sacrificial gate electrode to remove the lower sacrificial gate electrode and a sacrificial gate insulation layer and thereby define a first portion of a replacement gate cavity that is at least partially positioned under the patterned upper sacrificial gate electrode.
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