发明授权
US09236258B2 Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
有权
使用替代栅极技术形成用于半导体器件的栅极结构的方法和所得到的器件
- 专利标题： Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices
- 专利标题（中）： 使用替代栅极技术形成用于半导体器件的栅极结构的方法和所得到的器件
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申请号： US14259694申请日： 2014-04-23
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公开(公告)号： US09236258B2公开(公告)日： 2016-01-12
- 发明人: Ruilong Xie , Xiuyu Cai , Andy C. Wei , Qi Zhang , Ajey Poovannummoottil Jacob , Michael Hargrove
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L21/28 ; H01L29/51
摘要：
One method disclosed herein includes forming a sacrificial gate structure comprised of upper and lower sacrificial gate electrodes, performing at least one etching process to define a patterned upper sacrificial gate electrode comprised of a plurality of trenches that expose a portion of a surface of the lower sacrificial gate electrode and performing another etching process through the patterned upper sacrificial gate electrode to remove the lower sacrificial gate electrode and a sacrificial gate insulation layer and thereby define a first portion of a replacement gate cavity that is at least partially positioned under the patterned upper sacrificial gate electrode.
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