Invention Grant
- Patent Title: Method of writing to a spin torque magnetic random access memory
- Patent Title (中): 写入自旋转矩磁随机存取存储器的方法
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Application No.: US14702828Application Date: 2015-05-04
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Publication No.: US09245611B2Publication Date: 2016-01-26
- Inventor: Syed M. Alam , Thomas Andre , Matthew R. Croft , Chitra Subramanian , Halbert Lin
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G06F11/10 ; G11C29/04 ; G11C13/00

Abstract:
A method includes sampling magnetic bits, applying a write current pulse to the magnetic bits to set them to a first logic state, resampling the magnetic bits, and comparing the results of sampling and resampling to determine the bit state for each magnetic bit. A read or write operation may be received after initiation of writing back magnetic bits having the second state, where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time. An offset current may also be used during resampling.
Public/Granted literature
- US20150243337A1 METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2015-08-27
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