公开(公告)号：US09502093B2

公开(公告)日：2016-11-22

申请号：US15167758

申请日：2016-05-27

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

IPC: G11C11/00 ,  G11C11/16

CPC classification number: G11C11/1675 ,  G06F11/1048 ,  G06F11/1076 ,  G11C11/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0076 ,  G11C2029/0411

Abstract: A spin-torque magnetoresistive memory includes array read circuits and array write circuits coupled to an array of magnetic bits. The array read circuits sample magnetic bits in the array, apply a write current pulse to the magnetic bits to set them to a first logic state, resample the magnetic bits using an additional offset current, and compare the results of sampling and resampling to determine the bit state for each magnetic bit. For each of the magnetic bits in the page having the second logic state, the array write circuits initiate a write-back, wherein the write-back includes applying a second write current pulse having opposite polarity in comparison with the first write current pulse to set the magnetic bit to the second state. A read or write operation may be received after initiation of the write-back where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time.

Abstract translation: 自旋转矩磁阻存储器包括耦合到磁头阵列的阵列读取电路和阵列写入电路。 阵列读取电路对阵列中的磁头进行采样，向磁头施加写入电流脉冲以将其设置为第一逻辑状态，使用附加的偏移电流对磁性位进行重新采样，并比较采样和重采样的结果，以确定 每个磁头的位状态。 对于具有第二逻辑状态的页面中的每个磁性位，阵列写入电路启动回写，其中写回包括施加与第一写入电流脉冲相比具有相反极性的第二写入电流脉冲以设置 磁头到第二个状态。 在写回开始之后可以接收读取或写入操作，其中在写入操作的情况下可以中止一部分位的写回。 可以执行回写，使得磁头的不同部分在不同的时间被写回，从而及时地交错回写电流脉冲。

公开(公告)号：US20160099039A1

公开(公告)日：2016-04-07

申请号：US14970563

申请日：2015-12-16

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G06F11/1048 ,  G06F11/1076 ,  G11C11/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0076 ,  G11C2029/0411

Abstract: A spin-torque magnetoresistive memory includes array read circuits and array write circuits coupled to an array of magnetic bits. The array read circuits sample magnetic bits in the array, apply a write current pulse to the magnetic bits to set them to a first logic state, resample the magnetic bits, and comparing the results of sampling and resampling to determine the bit state for each magnetic bit. For each of the magnetic bits in the page having the second logic state, the array write circuits initiate a write-back, wherein the write-back includes applying a second write current pulse having opposite polarity in comparison with the first write current pulse to set the magnetic bit to the second state. A read or write operation may be received after initiation of the write-back where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time. An offset current may also be used during resampling.

Abstract translation: 自旋转矩磁阻存储器包括耦合到磁头阵列的阵列读取电路和阵列写入电路。 阵列读取电路对阵列中的磁头进行采样，向磁头施加写入电流脉冲以将其设置为第一逻辑状态，对磁头进行重新采样，并比较采样和重采样的结果，以确定每个磁性的位状态 位。 对于具有第二逻辑状态的页面中的每个磁性位，阵列写入电路启动回写，其中写回包括施加与第一写入电流脉冲相比具有相反极性的第二写入电流脉冲以设置 磁头到第二个状态。 在写回开始之后可以接收读取或写入操作，其中在写入操作的情况下可以中止一部分位的写回。 可以执行回写，使得磁头的不同部分在不同的时间被写回，从而及时地交错回写电流脉冲。 在重采样期间也可以使用偏移电流。

公开(公告)号：US09454432B2

公开(公告)日：2016-09-27

申请号：US14737558

申请日：2015-06-12

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft

IPC: G06F11/10 ,  G11C11/16 ,  H03M13/29

CPC classification number: G06F11/1076 ,  G06F11/1012 ,  G06F11/1048 ,  G11C11/1673 ,  G11C11/1675 ,  H03M13/2906

Abstract: A method includes destructively reading bits of a spin torque magnetic random access memory, using error correcting code (ECC) for error correction, and storing inverted or non-inverted data in data-store latches. When a subsequent write operation changes the state of data-store latches, parity calculation and majority detection of the bits are initiated. A majority bit detection and potential inversion of write data minimizes the number of write current pulses. A subsequent write operation received within a specified time or before an original write operation is commenced will cause the majority detection operation to abort.

公开(公告)号：US09378798B2

公开(公告)日：2016-06-28

申请号：US14970563

申请日：2015-12-16

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

IPC: G11C11/00 ,  G11C11/16

CPC classification number: G11C11/1675 ,  G06F11/1048 ,  G06F11/1076 ,  G11C11/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0076 ,  G11C2029/0411

Abstract: A spin-torque magnetoresistive memory includes array read circuits and array write circuits coupled to an array of magnetic bits. The array read circuits sample magnetic bits in the array, apply a write current pulse to the magnetic bits to set them to a first logic state, resample the magnetic bits, and comparing the results of sampling and resampling to determine the bit state for each magnetic bit. For each of the magnetic bits in the page having the second logic state, the array write circuits initiate a write-back, wherein the write-back includes applying a second write current pulse having opposite polarity in comparison with the first write current pulse to set the magnetic bit to the second state. A read or write operation may be received after initiation of the write-back where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time. An offset current may also be used during resampling.

Abstract translation: 自旋转矩磁阻存储器包括耦合到磁头阵列的阵列读取电路和阵列写入电路。 阵列读取电路对阵列中的磁头进行采样，向磁头施加写入电流脉冲以将其设置为第一逻辑状态，对磁头进行重新采样，并比较采样和重采样的结果，以确定每个磁性的位状态 位。 对于具有第二逻辑状态的页面中的每个磁性位，阵列写入电路启动回写，其中写回包括施加与第一写入电流脉冲相比具有相反极性的第二写入电流脉冲以设置 磁头到第二个状态。 在写回开始之后可以接收读取或写入操作，其中在写入操作的情况下可以中止一部分位的写回。 可以执行回写，使得磁头的不同部分在不同的时间被写回，从而及时地交错回写电流脉冲。 在重采样期间也可以使用偏移电流。

公开(公告)号：US20160276012A1

公开(公告)日：2016-09-22

申请号：US15167758

申请日：2016-05-27

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G06F11/1048 ,  G06F11/1076 ,  G11C11/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0076 ,  G11C2029/0411

Abstract: A spin-torque magnetoresistive memory includes array read circuits and array write circuits coupled to an array of magnetic bits. The array read circuits sample magnetic bits in the array, apply a write current pulse to the magnetic bits to set them to a first logic state, resample the magnetic bits using an additional offset current, and compare the results of sampling and resampling to determine the bit state for each magnetic bit. For each of the magnetic bits in the page having the second logic state, the array write circuits initiate a write-back, wherein the write-back includes applying a second write current pulse having opposite polarity in comparison with the first write current pulse to set the magnetic bit to the second state. A read or write operation may be received after initiation of the write-back where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time.

Abstract translation: 自旋转矩磁阻存储器包括耦合到磁头阵列的阵列读取电路和阵列写入电路。 阵列读取电路对阵列中的磁头进行采样，向磁头施加写入电流脉冲以将其设置为第一逻辑状态，使用附加的偏移电流对磁性位进行重新采样，并比较采样和重采样的结果，以确定 每个磁头的位状态。 对于具有第二逻辑状态的页面中的每个磁性位，阵列写入电路启动回写，其中写回包括施加与第一写入电流脉冲相比具有相反极性的第二写入电流脉冲以设置 磁头到第二个状态。 在写回开始之后可以接收读取或写入操作，其中在写入操作的情况下可以中止一部分位的写回。 可以执行回写，使得磁头的不同部分在不同的时间被写回，从而及时地交错回写电流脉冲。

公开(公告)号：US09245611B2

公开(公告)日：2016-01-26

申请号：US14702828

申请日：2015-05-04

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

IPC: G11C11/00 ,  G11C11/16 ,  G06F11/10 ,  G11C29/04 ,  G11C13/00

CPC classification number: G11C11/1675 ,  G06F11/1048 ,  G06F11/1076 ,  G11C11/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0076 ,  G11C2029/0411

Abstract: A method includes sampling magnetic bits, applying a write current pulse to the magnetic bits to set them to a first logic state, resampling the magnetic bits, and comparing the results of sampling and resampling to determine the bit state for each magnetic bit. A read or write operation may be received after initiation of writing back magnetic bits having the second state, where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time. An offset current may also be used during resampling.

Abstract translation: 一种方法包括采样磁头，将写入电流脉冲施加到磁性位以将其设置为第一逻辑状态，重新采样磁头，以及比较采样和重采样的结果，以确定每个磁性位的位状态。 在开始写入具有第二状态的磁性位之后可以接收读取或写入操作，其中在写入操作的情况下可以针对位的一部分中止回写。 可以执行回写，使得磁头的不同部分在不同的时间被写回，从而及时地交错回写电流脉冲。 在重采样期间也可以使用偏移电流。

公开(公告)号：US20150243337A1

公开(公告)日：2015-08-27

申请号：US14702828

申请日：2015-05-04

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft ,  Chitra Subramanian ,  Halbert Lin

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G06F11/1048 ,  G06F11/1076 ,  G11C11/00 ,  G11C11/16 ,  G11C11/1673 ,  G11C11/1693 ,  G11C2013/0076 ,  G11C2029/0411

Abstract: A method includes sampling magnetic bits, applying a write current pulse to the magnetic bits to set them to a first logic state, resampling the magnetic bits, and comparing the results of sampling and resampling to determine the bit state for each magnetic bit. A read or write operation may be received after initiation of writing back magnetic bits having the second state, where the write-back can be aborted for a portion of the bits in the case of a write operation. The write-back may be performed such that different portions of the magnetic bits are written back at different times, thereby staggering the write-back current pulses in time. An offset current may also be used during resampling.

Abstract translation: 一种方法包括采样磁头，将写入电流脉冲施加到磁性位以将其设置为第一逻辑状态，重新采样磁头，以及比较采样和重采样的结果，以确定每个磁性位的位状态。 在开始写入具有第二状态的磁性位之后可以接收读取或写入操作，其中在写入操作的情况下可以针对位的一部分中止回写。 可以执行回写，使得磁头的不同部分在不同的时间被写回，从而及时地交错回写电流脉冲。 在重采样期间也可以使用偏移电流。

公开(公告)号：US20150355967A1

公开(公告)日：2015-12-10

申请号：US14737558

申请日：2015-06-12

Applicant: Everspin Technologies, Inc.

Inventor： Syed M. Alam ,  Thomas Andre ,  Matthew R. Croft

IPC: G06F11/10 ,  G11C11/16

CPC classification number: G06F11/1076 ,  G06F11/1012 ,  G06F11/1048 ,  G11C11/1673 ,  G11C11/1675 ,  H03M13/2906

Abstract: A method includes destructively reading bits of a spin torque magnetic random access memory, using error correcting code (ECC) for error correction, and storing inverted or non-inverted data in data-store latches. When a subsequent write operation changes the state of data-store latches, parity calculation and majority detection of the bits are initiated. A majority bit detection and potential inversion of write data minimizes the number of write current pulses. A subsequent write operation received within a specified time or before an original write operation is commenced will cause the majority detection operation to abort.

Abstract translation: 一种方法包括使用用于纠错的纠错码（ECC）和将反相或非反相数据存储在数据存储锁存器中来自动读取自旋扭矩磁随机存取存储器的位。 当随后的写入操作改变数据存储锁存器的状态时，启动奇偶校验计算和多数位的检测。 写入数据的多数位检测和潜在反转使写入电流脉冲的数量最小化。 在指定时间内或原始写入操作开始之前接收到的后续写入操作将导致多数检测操作中止。