Invention Grant
- Patent Title: Deposition chambers with UV treatment and methods of use
- Patent Title (中): 具有UV处理的沉积室和使用方法
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Application No.: US13897327Application Date: 2013-05-17
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Publication No.: US09252024B2Publication Date: 2016-02-02
- Inventor: Hyman Lam , Nicholas R. Denny , Joseph AuBuchon , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/3205 ; C23C16/48 ; H01L21/67 ; H01L21/768
Abstract:
Described are apparatus and methods for processing semiconductor wafers so that a film can be deposited on the wafer and the film can be UV treated without the need to move the wafer to a separate location for treatment. The apparatus and methods include a window which is isolated from the reactive gases by a flow of an inert gas.
Public/Granted literature
- US20140342555A1 DEPOSITION CHAMBERS WITH UV TREATMENT AND METHODS OF USE Public/Granted day:2014-11-20
Information query
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