Invention Grant
US09263446B1 Methods of forming replacement gate structures on transistor devices with a shared gate structure and the resulting products
有权
在具有共享栅极结构的晶体管器件上形成替代栅极结构的方法以及所得到的产物
- Patent Title: Methods of forming replacement gate structures on transistor devices with a shared gate structure and the resulting products
- Patent Title (中): 在具有共享栅极结构的晶体管器件上形成替代栅极结构的方法以及所得到的产物
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Application No.: US14511286Application Date: 2014-10-10
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Publication No.: US09263446B1Publication Date: 2016-02-16
- Inventor: Ruilong Xie , Kwan-Yong Lim , Min Gyu Sung , Chanro Park
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/66 ; H01L21/3213 ; H01L21/28
Abstract:
One illustrative method disclosed herein includes, among other things, forming a shared gate cavity that spans across an isolation region and is positioned above first and second active regions, forming at least one layer of material in the shared gate cavity above the first and second active regions and above the isolation region, forming a first masking layer that covers portions of the shared gate cavity positioned above the first and second active regions while exposing a portion of the shared gate cavity positioned above the isolation region, with the first masking layer in position, performing at least one first etching process to remove at least a portion of the at least one layer of material in the exposed portion of the shared gate cavity above the isolation region, and removing the first masking layer.
Information query
IPC分类:
