Invention Grant
US09275748B2 Low leakage, low threshold voltage, split-gate flash cell operation
有权
低泄漏,低阈值电压,分闸门闪存单元操作
- Patent Title: Low leakage, low threshold voltage, split-gate flash cell operation
- Patent Title (中): 低泄漏,低阈值电压,分闸门闪存单元操作
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Application No.: US14190010Application Date: 2014-02-25
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Publication No.: US09275748B2Publication Date: 2016-03-01
- Inventor: Nhan Do , Steven Malcolm Lemke , Jinho Kim , Jong-Won Yoo , Alexander Kotov , Yuri Tkachev
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Main IPC: G11C16/26
- IPC: G11C16/26 ; G11C16/14 ; G11C16/04 ; H01L21/28 ; H01L29/788 ; H01L27/115 ; H01L29/423

Abstract:
A method of reading a memory device having rows and columns of memory cells formed on a substrate, where each memory cell includes spaced apart first and second regions with a channel region therebetween, a floating gate disposed over a first portion of the channel region, a select gate disposed over a second portion of the channel region, a control gate disposed over the floating gate, and an erase gate disposed over the first region. The method includes placing a small positive voltage on the unselected source lines, and/or a small negative voltage on the unselected word lines, during the read operation to suppress sub-threshold leakage and thereby improve read performance.
Public/Granted literature
- US20140269062A1 Low Leakage, Low Threshold Voltage, Split-Gate Flash Cell Operation Public/Granted day:2014-09-18
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