Invention Grant
US09281183B2 Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge
有权
在具有高界面质量和可调谐固定界面电荷的N-极性III族氮化物半导体上的氧化物电介质的金属有机化学气相沉积
- Patent Title: Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge
- Patent Title (中): 在具有高界面质量和可调谐固定界面电荷的N-极性III族氮化物半导体上的氧化物电介质的金属有机化学气相沉积
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Application No.: US14597989Application Date: 2015-01-15
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Publication No.: US09281183B2Publication Date: 2016-03-08
- Inventor: Xiang Liu , Umesh K. Mishra , Stacia Keller , Jeonghee Kim , Matthew Laurent , Jing Lu , Ramya Yeluri , Silvia H. Chan
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00 ; H01L21/02 ; H01L29/66 ; H01L29/778 ; C30B25/02 ; H01L29/20
Abstract:
A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.
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