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US09281183B2 Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge 有权
在具有高界面质量和可调谐固定界面电荷的N-极性III族氮化物半导体上的氧化物电介质的金属有机化学气相沉积

Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge
Abstract:
A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.
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