公开(公告)号：US08878249B2

公开(公告)日：2014-11-04

申请号：US13861808

申请日：2013-04-12

Applicant: The Regents of the University of California

Inventor： Jing Lu ,  Stacia Keller ,  Umesh K. Mishra

IPC: H01L29/66 ,  H01L21/338

CPC classification number: H01L29/778 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/8252 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7781

Abstract: A method for growing high mobility, high charge Nitrogen polar (N-polar) or Nitrogen face (In,Al,Ga)N/GaN High Electron Mobility Transistors (HEMTs). The method can provide a successful approach to increase the breakdown voltage and reduce the gate leakage of the N-polar HEMTs, which has great potential to improve the N-polar or N-face HEMTs' high frequency and high power performance.

Abstract translation: 用于生长高迁移率，高电荷氮极（N极）或氮面（In，Al，Ga）N / GaN高电子迁移率晶体管（HEMT）的方法。 该方法可以提供成功的方法来增加击穿电压并降低N-极性HEMT的栅极泄漏，其具有改善N极或N面HEMTs高频和高功率性能的巨大潜力。

公开(公告)号：US20160163846A1

公开(公告)日：2016-06-09

申请号：US15009509

申请日：2016-01-28

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Xiang Liu ,  Umesh K. Mishra ,  Stacia Keller ,  Jeonghee Kim ,  Matthew Laurent ,  Jing Lu ,  Ramya Yeluri ,  Silvia H. Chan

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/7787 ,  C30B25/02 ,  C30B29/20 ,  C30B29/406 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7781

Abstract: A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.

公开(公告)号：US20150200286A1

公开(公告)日：2015-07-16

申请号：US14597989

申请日：2015-01-15

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Xiang Liu ,  Umesh K. Mishra ,  Stacia Keller ,  Jeonghee Kim ,  Matthew Laurent ,  Jing Lu ,  Ramya Yeluri ,  Silvia H. Chan

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7787 ,  C30B25/02 ,  C30B29/20 ,  C30B29/406 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7781

Abstract: A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.

Abstract translation: 一种制造III族氮化物半导体器件的方法，包括在氧化物生长和III族氮化物半导体的生长之间不暴露于空气中，依次生长III族氮化物半导体和氧化物以形成氧化物/ III族氮化物界面 。

公开(公告)号：US09281183B2

公开(公告)日：2016-03-08

申请号：US14597989

申请日：2015-01-15

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Xiang Liu ,  Umesh K. Mishra ,  Stacia Keller ,  Jeonghee Kim ,  Matthew Laurent ,  Jing Lu ,  Ramya Yeluri ,  Silvia H. Chan

IPC: H01L21/00 ,  H01L29/00 ,  H01L21/02 ,  H01L29/66 ,  H01L29/778 ,  C30B25/02 ,  H01L29/20

CPC classification number: H01L29/7787 ,  C30B25/02 ,  C30B29/20 ,  C30B29/406 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/0262 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7781

Abstract: A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.

Abstract translation: 一种制造III族氮化物半导体器件的方法，包括在氧化物生长和III族氮化物半导体的生长之间不暴露于空气中，依次生长III族氮化物半导体和氧化物以形成氧化物/ III族氮化物界面 。