Invention Grant
US09299621B2 Smart measurement techniques to enhance inline process control stability 有权
智能测量技术,可提高在线过程控制的稳定性

Smart measurement techniques to enhance inline process control stability
Abstract:
An integrated circuit includes a number of lateral diffusion measurement structures arranged on a silicon substrate. A lateral diffusion measurement structure includes a p-type region and an n-type region which cooperatively span a predetermined initial distance between opposing outer edges of the lateral diffusion measurement structure. The p-type and n-type regions meet at a p-n junction expected to be positioned at a target junction location after dopant diffusion has occurred.
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