Invention Grant
- Patent Title: Semiconductor devices and methods for backside photo alignment
- Patent Title (中): 用于背面照相校准的半导体器件和方法
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Application No.: US14281362Application Date: 2014-05-19
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Publication No.: US09299663B2Publication Date: 2016-03-29
- Inventor: Brandon P. Wirz , Keith Ypma , Christopher J. Gambee , Jaspreet S. Gandhi , Kevin M. Dowdle , Irina Vasilyeva , Yang Chao , Jon Hacker
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L23/544 ; H01L23/48 ; H01L21/768

Abstract:
Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for aligning an electronic feature to a through-substrate via includes forming a self-aligned alignment feature having a wall around at least a portion of the TSV and aligning a photolithography tool to the self-aligned alignment feature. In some embodiments, the self-aligned alignment feature is defined by the topography of a seed material at a backside of the device.
Public/Granted literature
- US20150333014A1 SEMICONDUCTOR DEVICES AND METHODS FOR BACKSIDE PHOTO ALIGNMENT Public/Granted day:2015-11-19
Information query
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