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公开(公告)号：US09741612B2
公开(公告)日：2017-08-22
申请号：US15050858
申请日：2016-02-23
发明人： Brandon P. Wirz , Keith Ypma , Christopher J. Gambee , Jaspreet S. Gandhi , Kevin M. Dowdle , Irina Vasilyeva , Yang Chao , Jon Hacker
IPC分类号： H01L21/768 , H01L23/544 , H01L21/683 , H01L23/48 , H01L21/027 , H01L21/311
CPC分类号： H01L21/76897 , H01L21/0274 , H01L21/31111 , H01L21/6836 , H01L21/76843 , H01L21/76871 , H01L21/76898 , H01L23/481 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for aligning an electronic feature to a through-substrate via includes forming a self-aligned alignment feature having a wall around at least a portion of the TSV and aligning a photolithography tool to the self-aligned alignment feature. In some embodiments, the self-aligned alignment feature is defined by the topography of a seed material at a backside of the device.
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公开(公告)号：US20160172242A1
公开(公告)日：2016-06-16
申请号：US15050858
申请日：2016-02-23
发明人： Brandon P. Wirz , Keith Ypma , Christopher J. Gambee , Jaspreet S. Gandhi , Kevin M. Dowdle , Irina Vasilyeva , Yang Chao , Jon Hacker
IPC分类号： H01L21/768 , H01L21/311 , H01L21/027
CPC分类号： H01L21/76897 , H01L21/0274 , H01L21/31111 , H01L21/6836 , H01L21/76843 , H01L21/76871 , H01L21/76898 , H01L23/481 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for aligning an electronic feature to a through-substrate via includes forming a self-aligned alignment feature having a wall around at least a portion of the TSV and aligning a photolithography tool to the self-aligned alignment feature. In some embodiments, the self-aligned alignment feature is defined by the topography of a seed material at a backside of the device.
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公开(公告)号：US09299663B2
公开(公告)日：2016-03-29
申请号：US14281362
申请日：2014-05-19
发明人： Brandon P. Wirz , Keith Ypma , Christopher J. Gambee , Jaspreet S. Gandhi , Kevin M. Dowdle , Irina Vasilyeva , Yang Chao , Jon Hacker
IPC分类号： H01L23/04 , H01L23/544 , H01L23/48 , H01L21/768
CPC分类号： H01L21/76897 , H01L21/0274 , H01L21/31111 , H01L21/6836 , H01L21/76843 , H01L21/76871 , H01L21/76898 , H01L23/481 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for aligning an electronic feature to a through-substrate via includes forming a self-aligned alignment feature having a wall around at least a portion of the TSV and aligning a photolithography tool to the self-aligned alignment feature. In some embodiments, the self-aligned alignment feature is defined by the topography of a seed material at a backside of the device.
摘要翻译： 这里描述了微电子器件和制造方法的各种实施例。 在一个实施例中，用于将电子特征对准到贯通基板通孔的方法包括形成具有围绕TSV的至少一部分的壁的自对准对准特征，并将光刻工具对准自对准对准特征。 在一些实施例中，自对准对准特征由设备背面的种子材料的形貌定义。
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公开(公告)号：US20150333014A1
公开(公告)日：2015-11-19
申请号：US14281362
申请日：2014-05-19
发明人： Brandon P. Wirz , Keith Ypma , Christopher J. Gambee , Jaspreet S. Gandhi , Kevin M. Dowdle , Irina Vasilyeva , Yang Chao , Jon Hacker
IPC分类号： H01L23/544 , H01L21/768 , H01L23/48
CPC分类号： H01L21/76897 , H01L21/0274 , H01L21/31111 , H01L21/6836 , H01L21/76843 , H01L21/76871 , H01L21/76898 , H01L23/481 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2223/54473 , H01L2924/0002 , H01L2924/00
摘要： Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for aligning an electronic feature to a through-substrate via includes forming a self-aligned alignment feature having a wall around at least a portion of the TSV and aligning a photolithography tool to the self-aligned alignment feature. In some embodiments, the self-aligned alignment feature is defined by the topography of a seed material at a backside of the device.
摘要翻译： 这里描述了微电子器件和制造方法的各种实施例。 在一个实施例中，用于将电子特征对准到贯通基板通孔的方法包括形成具有围绕TSV的至少一部分的壁的自对准对准特征，并将光刻工具对准自对准对准特征。 在一些实施例中，自对准对准特征由设备背面的种子材料的形貌定义。
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