Invention Grant
- Patent Title: Method to improve reliability of high-K metal gate stacks
- Patent Title (中): 提高高K金属栅极堆叠的可靠性的方法
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Application No.: US13662505Application Date: 2012-10-28
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Publication No.: US09299802B2Publication Date: 2016-03-29
- Inventor: Takashi Ando , Eduard A. Cartier , Barry P. Linder , Vijay Narayanan
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bietto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/66 ; H01L21/28 ; H01L21/30 ; H01L29/49 ; H01L29/51 ; H01L29/78
Abstract:
A method of fabricating a gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k dielectric layer over an area vacated by the dummy gate; depositing a thin metal layer over the high-k dielectric layer; annealing the replacement gate structure in an ambient atmosphere containing hydrogen; and depositing a gap fill layer.
Public/Granted literature
- US20140120707A1 Method to Improve Reliability of High-k Metal Gate Stacks Public/Granted day:2014-05-01
Information query
IPC分类:
