Invention Grant
US09305791B2 High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
有权
高生产率组合工作流程将硫族化物材料筛选和设计为非易失性存储器电流选择器
- Patent Title: High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
- Patent Title (中): 高生产率组合工作流程将硫族化物材料筛选和设计为非易失性存储器电流选择器
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Application No.: US14135505Application Date: 2013-12-19
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Publication No.: US09305791B2Publication Date: 2016-04-05
- Inventor: Imran Hashim
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/30 ; B08B3/04 ; G11C13/00 ; H01L27/24 ; C23C14/08 ; C23C14/22 ; C23C14/34 ; H01L21/02 ; H01L21/66 ; H01L45/00 ; H01L21/306 ; H01L21/67 ; C23C18/16 ; C25D17/02 ; B01J19/00
Abstract:
Combinatorial workflow is provided for evaluating materials and processes for current selector devices in a cross point memory array. Blanket layers, metal-insulator-metal devices, and compete memory structures are combinatorially fabricated on multiple regions of a substrate, with each region having a different material and process condition for the current selector devices. The current selector devices are then characterized, and the data are compared to obtain the optimum materials and processes.
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