发明授权
- 专利标题： Power semiconductor chip with a metallic moulded body for contacting thick wires or strips and method for the production thereof
- 专利标题（中）： 具有用于接触粗线或带的金属成型体的功率半导体芯片及其制造方法
-
申请号： US14346458申请日： 2012-09-10
-
公开(公告)号： US09318421B2公开(公告)日： 2016-04-19
- 发明人: Martin Becker , Ronald Eisele , Frank Osterwald , Jacek Rudzki
- 申请人： Martin Becker , Ronald Eisele , Frank Osterwald , Jacek Rudzki
- 申请人地址： DE Flensburg
- 专利权人： Danfoss Silicon Power GmbH
- 当前专利权人： Danfoss Silicon Power GmbH
- 当前专利权人地址： DE Flensburg
- 代理机构： McCormick, Paulding & Huber LLP
- 优先权： DE102011115887 20111015
- 国际申请： PCT/EP2012/003787 WO 20120910
- 国际公布： WO2013/053420 WO 20130418
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L23/492 ; H01L23/00
摘要：
The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal molded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the molded body used according to the method for contacting are selected corresponding to the magnitude.