Invention Grant
US09318694B2 Methods of forming a magnetic random access memory etch spacer and structures formed thereby
有权
形成磁性随机存取存储器蚀刻间隔物的方法和由此形成的结构
- Patent Title: Methods of forming a magnetic random access memory etch spacer and structures formed thereby
- Patent Title (中): 形成磁性随机存取存储器蚀刻间隔物的方法和由此形成的结构
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Application No.: US14140758Application Date: 2013-12-26
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Publication No.: US09318694B2Publication Date: 2016-04-19
- Inventor: Daniel Lamborn , Oleg Golonzka , Christopher Wiegand
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/08 ; H01L43/10 ; H01L43/12
Abstract:
Methods of forming a memory device structure are described. Those methods may include forming a non-conductive spacer material on a top electrode of a magnetic tunnel junction structure, and then forming a highly selective material on the non-conductive spacer material of the magnetic tunnel junction prior to etching a bottom electrode of the magnetic tunnel junction.
Public/Granted literature
- US20150188033A1 METHODS OF FORMING A MAGNETIC RANDOM ACCESS MEMORY ETCH SPACER AND STRUCTURES FORMED THEREBY Public/Granted day:2015-07-02
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