Invention Grant
US09318694B2 Methods of forming a magnetic random access memory etch spacer and structures formed thereby 有权
形成磁性随机存取存储器蚀刻间隔物的方法和由此形成的结构

Methods of forming a magnetic random access memory etch spacer and structures formed thereby
Abstract:
Methods of forming a memory device structure are described. Those methods may include forming a non-conductive spacer material on a top electrode of a magnetic tunnel junction structure, and then forming a highly selective material on the non-conductive spacer material of the magnetic tunnel junction prior to etching a bottom electrode of the magnetic tunnel junction.
Information query
Patent Agency Ranking
0/0